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Panasonic Electronic Components Datasheet


2PG401

Insulated Gate Bipolar Transistor



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2PG401 pdf
IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V
q Allowing to control large current: IC(peak) = 130A
q Allowing to provide with the surface mounting package
s Applications
q For flash-light for use in a camera
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Collector to emitter voltage
Gate to emitter voltage
Collector current
DC
Pulse
Allowable power
dissipation
TC = 25°C
Ta = 25°C
VCES
VGES
IC
ICP
PC
400
±8
5
130
15
1.3
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
Unit
V
V
A
A
W
°C
°C
7.0±0.3
3.0±0.2
unit: mm
3.5±0.2
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
1: Gate
2: Collector
3: Emitter
I Type Package
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
ICES
IGES
VCES
VGE(th)
VCE(sat)
Cies
td(on)
tr
td(off)
tf
VCE = 320V, VGE = 0
VGE = ±8V, VCE = 0
IC = 1mA, VGE = 0
VCE = 10V, IC = 1mA
VGE = 5V, IC = 5A
VGE = 5V, IC = 130A
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V, IC = 130A
VGE = 5V, Rg = 25
min typ max Unit
10 µA
±1 µA
400 V
0.5 1.5 V
2
V
10
1930
pF
130 ns
1.4 µs
350 ns
1.5 µs
1



Part Number 2PG401
Description Insulated Gate Bipolar Transistor
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 1 Pages
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