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2N6400

Silicon Controlled Rectifiers



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2N6400 pdf
2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
halfwave silicon gatecontrolled, solidstate devices are needed.
Features
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 V
These are PbFree Devices
MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(TJ = *40 to 125°C, Sine Wave 50 to 60
Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
VDRM,
VRRM
50
100
200
400
600
800
V
On-State Current RMS (180° Conduction
Angles; TC = 100°C)
Average On-State Current (180° Conduc-
tion Angles; TC = 100°C)
Peak Non-repetitive Surge Current (1/2
Cycle, Sine Wave 60 Hz, TJ = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
16
10
160
145
A
A
A
A2s
Forward Peak Gate Power (Pulse Width
1.0 ms, TC = 100°C)
Forward Average Gate Power (t = 8.3 ms,
TC = 100°C)
Forward Peak Gate Current (Pulse Width
1.0 ms, TC = 100°C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
20
0.5
2.0
40 to
+125
W
W
A
°C
Storage Temperature Range
Tstg 40 to °C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
4
TO220AB
CASE 221A
STYLE 3
2N640xG
AYWW
1
2
3
x = 0, 1, 2, 3, 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 6
1
Publication Order Number:
2N6400/D



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2N6400 pdf
2N6400 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
*Peak Forward OnState Voltage (ITM = 32 A Peak, Pulse Width 1 ms, Duty Cycle 2%)
* Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
TC = 25°C
TC = 40°C
* Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
TC = 25°C
TC = 40°C
Gate NonTrigger Voltage (VD = 12 Vdc, RL = 100 W), TC = +125°C
* Holding Current
TC = 25°C
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
*TC = 40°C
Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM)
Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM)
TC = 25°C
TJ = +125°C
DYNAMIC CHARACTERISTICS
Critical RateofRise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform)
TJ = +125°C
*Indicates JEDEC Registered Data.
Symbol
RqJC
TL
Symbol
IDRM,
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
dv/dt
Max Unit
1.5 °C/W
260 °C
Min Typ Max Unit
− − 10 mA
− − 2.0 mA
− − 1.7
9.0 30
− − 60
0.7 1.5
− − 2.5
0.2
18 40
− − 60
1.0
15
35
V
mA
V
V
mA
ms
ms
50 V/ms
http://onsemi.com
2



Part Number 2N6400
Description Silicon Controlled Rectifiers
Maker ON Semiconductor - ON Semiconductor
Total Page 7 Pages
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