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2N6397

(2N6394 - 2N6399) Silicon Controlled Rectifiers



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2N6394 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 V
Pb−Free Packages are Available*
MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
VDRM,
VRRM
50
100
400
800
Unit
V
On-State RMS Current
(180° Conduction Angles; TC = 90°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C)
Circuit Fusing (t = 8.3 ms)
IT(RMS)
ITSM
I2t
12
100
40
A
A
A2s
Forward Peak Gate Power
(Pulse Width 1.0 ms, TC = 90°C)
PGM
20
W
Forward Average Gate Power
(t = 8.3 ms, TC = 90°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width 1.0 ms, TC = 90°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150
MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)
°C
Rating
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8from Case for 10 Seconds
RqJC
TL
2.0 °C/W
260 °C
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 6
1
http://onsemi.com
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 3
2N639xG
AYWW
1
2
3
2N639x = Device Code
x = 4, 5, 7, or 9
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6394/D



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2N6394 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Symbol Min Typ Max
†Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM, IRRM
− 10
− 2.0
†Peak Forward On−State Voltage (Note 2) (ITM = 24 A Peak)
†Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms)
† Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms)
Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
† Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM)
Turn-Off Time (VD = Rated VDRM)
(ITM = 12 A, IR = 12 A)
(ITM = 12 A, IR = 12 A, TJ = 125°C)
VTM
IGT
VGT
VGD
IH
tgt
tq
− 1.7 2.2
− 5.0 30
− 0.7 1.5
0.2 −
− 6.0 50
− 1.0 2.0
− 15 −
− 35 −
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off-State Voltage Exponential
(VD = Rated VDRM, TJ = 125°C)
†Indicates JEDEC Registered Data
2. Pulse Test: Pulse Width 300 msec, Duty Cycle 2%.
dv/dt
− 50 −
Unit
mA
mA
V
mA
V
V
mA
ms
ms
V/ms
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
VTM
IH
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
130
125
120
115
110
105
100
95
90
0
α
α = CONDUCTION ANGLE
dc
α = 30°
60°
90° 180°
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Current Derating
20
18
16 α
14 α = CONDUCTION ANGLE
12 α = 30° 60°
10
90°
180° dc
8.0
6.0
4.0 TJ 125°C
2.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 2. Maximum On−State Power Dissipation
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2



Part Number 2N6397
Description (2N6394 - 2N6399) Silicon Controlled Rectifiers
Maker ON Semiconductor - ON Semiconductor
Total Page 5 Pages
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