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  ON Semiconductor Electronic Components Datasheet  


2N6387

DARLINGTON NPN SILICON POWER TRANSISTORS


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2N6387, 2N6388
2N6388 is a Preferred Device
Plastic Medium−Power
Silicon Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − 2N6387
= 80 Vdc (Min) − 2N6388
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc − 2N6387, 2N6388
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
TO−220AB Compact Package
Pb−Free Packages are Available*
http://onsemi.com
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 − 80 VOLTS
MARKING
DIAGRAM
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Symbol
2N6387 VCEO
2N6388
Value
60
80
Unit
Vdc
Collector−Base Voltage
2N6387 VCB
2N6388
60 Vdc
80
Emitter−Base Voltage
Collector Current − Continuous
− Peak
VEB 5.0 Vdc
IC 10 Adc
15
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
IB 250 mAdc
PD 65 W
0.52 W/°C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction,
Temperature Range
PD 2.0 W
0.016 W/°C
TJ, Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.92 _C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
1
2
3
4
TO−220AB
CASE 221A
STYLE 1
2N638xG
AYWW
2N638x = Device Code
x = 7 or 8
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N6387
2N6387G
2N6388
2N6388G
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 12
1
Publication Order Number:
2N6387/D



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TA TC
4.0 80
2N6387, 2N6388
3.0 60
2.0 40
1.0 20
TC
TA
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, IB=0)
2N6387
2N6388
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, IB=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE − 80 Vdc, VEB(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 1 0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.01 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc)
2N6387
2N6388
2N6387
2N6388
2N6387
2N6388
2N6387, 2N6388
2N6387, 2N6388
2N6387, 2N6388
2N6387, 2N6388
2N6387, 2N6388
2N6387, 2N6388
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
Symbol
VCEO(sus)
ICEO
ICEX
IEBO
hFE
VCE(sat)
VBE(on)
|hfe|
Cob
hfe
Min Max
Unit
Vdc
60 −
80 −
mAdc
− 1.0
− 1.0
mAdc
− 300
− 300
− 3.0 mAdc
− 3.0
− 5.0 mAdc
1000 20,000
100 −
− 2.0
− 3.0
− 2.8
− 4.5
Vdc
Vdc
20
1000
200
pF
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
2



Part Number 2N6387
Description DARLINGTON NPN SILICON POWER TRANSISTORS
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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