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2N6349

Silicon Bidirectional Thyristors



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2N6349 pdf
2N6344, 2N6349
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in all Four Quadrants
For 400 Hz Operation, Consult Factory
Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
* Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +110°C, Sine Wave 50 to
60 Hz, Gate Open)
2N6344
2N6349
VDRM,
VRRM
600
800
Unit
Volts
*On–State RMS Current
(TC = +80°C)
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90°C)
IT(RMS)
Amps
8.0
4.0
*Peak Non–Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
ITSM
100 Amps
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40 A2s
*Peak Gate Power
(TC = +80°C, Pulse Width = 2 µs)
*Average Gate Power
(TC = +80°C, t = 8.3 ms)
PGM
20 Watts
PG(AV) 0.5 Watt
*Peak Gate Current
(TC = +80°C, Pulse Width = 2.0 µs)
IGM
2.0 Amps
*Peak Gate Voltage
(TC = +80°C, Pulse Width = 2.0 µs)
*Operating Junction Temperature Range
VGM
TJ
10 Volts
– 40 to
+125
°C
*Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
2N6344
TO220AB
500/Box
2N6349
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
March, 2000 – Rev. 1
1
Publication Order Number:
2N6344/D



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2N6344, 2N6349
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
*Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
RθJC
TL
2.2
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
* Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 100°C
IDRM,
IRRM
——
——
* Peak On–State Voltage
" p(ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40°C
*MT2(+), G(–); MT2(–), G(+) TC = –40°C
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40°C
*MT2(+), G(–); MT2(–), G(+) TC = –40°C
Gate Non–Trigger Voltage (Continuous dc)
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C)
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)
VTM
IGT
VGT
VGD
— 1.3
— 12
— 12
— 20
— 35
——
——
— 0.9
— 0.9
— 1.1
— 1.4
——
——
0.2 —
* Holding Current
"(VD = 12 Vdc, Gate Open)
(Initiating Current = 200 mA)
* Turn-On Time
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
TC = 25°C
*TC = –40°C
IH
tgt
— 6.0
——
— 1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
Gate Unenergized, TC = 80°C)
*Indicates JEDEC Registered Data.
dv/dt(c)
— 5.0
Unit
°C/W
°C
Max Unit
10 µA
2.0 mA
1.55 Volts
mA
50
75
50
75
100
125
Volts
2.0
2.5
2.0
2.5
2.5
3.0
Volts
mA
40
75
2.0 µs
— V/µs
http://onsemi.com
2



Part Number 2N6349
Description Silicon Bidirectional Thyristors
Maker ON Semiconductor - ON Semiconductor
Total Page 8 Pages
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