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2N6344A

(2N6344A - 2N6349A) Triacs Silicon Bidirectional Thyristors



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2N6344A, 2N6348A,
2N6349A
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Blocking Voltage to 800 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in all Four Quadrants
For 400 Hz Operation, Consult Factory
8.0 A Devices Available as 2N6344 thru 2N6349
Pb−Free Packages are Available*
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 4
2N634xAG
AYWW
2N634xA = Device Code
x = 4, 8, or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6344A/D



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2N6344A, 2N6348A, 2N6349A
MAXIMUM RATINGS
Characteristics
Symbol
Value
Unit
*Peak Repetitive Off−State Voltage (Note 1)
(Gate Open, TJ = −40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open)
2N6344A, 2N6348A
2N6349A
VDRM,
VRRM
V
600
800
*On−State RMS Current (Full Cycle Sine Wave 50 to 60 Hz)
*Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by rated current
(TC = +80°C)
(TC = +95°C)
IT(RMS)
ITSM
A
12
6.0
100 A
Circuit Fusing Consideration (t = 8.3 ms)
I2t 59 A2s
*Peak Gate Power (TC = +80°C, Pulse Width = 2.0 ms)
PGM
20 W
*Average Gate Power (TC = +80°C, t = 8.3 ms)
PG(AV)
0.5 W
*Peak Gate Current (Pulse Width = 2.0 ms; TC = +80°C)
IGM 2.0 A
*Peak Gate Voltage (Pulse Width = 2.0 ms; TC = +80°C)
VGM
"10
V
*Operating Junction Temperature Range
TJ
−40 to +125
°C
*Storage Temperature Range
Tstg
−40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
TL
Max Unit
2.0 °C/W
260 °C
ORDERING INFORMATION
Device
2N6344A
2N6344AG
2N6348A
2N6348AG
2N6349A
2N6349AG
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
500 Units / Box
http://onsemi.com
2



Part Number 2N6344A
Description (2N6344A - 2N6349A) Triacs Silicon Bidirectional Thyristors
Maker ON Semiconductor - ON Semiconductor
Total Page 7 Pages
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