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2N6035

(2N6034 - 2N6039) Plastic Darlington Complementary Silicon Power Transistors



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2N6035 pdf
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(PNP) 2N6034, 2N6035,
2N6036; (NPN) 2N6038,
2N6039
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Voltage
2N6034 VCEO 40 Vdc
2N6035, 2N6038
60
2N6036, 2N6039
80
Collector−Base Voltage
2N6034 VCBO 40 Vdc
2N6035, 2N6038
60
2N6036, 2N6039
80
Emitter−Base Voltage
Collector Current
VEBO 5.0 Vdc
Continuous
Peak
IC
4.0 Adc
8.0 Apk
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
IB 100 mAdc
PD 40 W
320 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to
+ 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.12 °C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
321
TO−225AA
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
2
N603xG
Y
WW
2N603x
G
= Year
= Work Week
= Device Code
x = 4, 5, 6, 8, 9
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 13
1
Publication Order Number:
2N6035/D



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2N6035 pdf
(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6034
2N6035, 2N6038
2N6036, 2N6039
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
Collector−Cutoff Current
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
Collector−Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 40 mAdc)
Base−Emitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
DYNAMIC CHARACTERISTICS
Small−Signal Current−Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
*Indicates JEDEC Registered Data.
2N6034, 2N6035, 2N6036
2N6038, 2N6039
Symbol
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
|hfe|
Cob
Min Max Unit
Vdc
40 −
60 −
80 −
mA
100
− 100
− 100
mA
− 100
− 100
− 100
− 500
− 500
− 500
mAdc
0.5
0.5
0.5
− 2.0 mAdc
500 −
750 15,000
100 −
Vdc
2.0
3.0
− 4.0 Vdc
− 2.8 Vdc
25 −
pF
− 200
− 100
http://onsemi.com
2



Part Number 2N6035
Description (2N6034 - 2N6039) Plastic Darlington Complementary Silicon Power Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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