http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



  ON Semiconductor Electronic Components Datasheet  


2N5655G

Plastic NPN Silicon High-Voltage Power Transistors



No Preview Available !

2N5655G pdf
2N5655G, 2N5657G
Plastic NPN Silicon
High-Voltage Power
Transistors
These devices are designed for use in line−operated equipment such
as audio output amplifiers; low−current, high−voltage converters; and
AC line relays.
Features
Excellent DC Current Gain
High Current−Gain − Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N5655G
2N5657G
VCEO
250
350
Vdc
Collector−Base Voltage
2N5655G
2N5657G
VCB Vdc
275
375
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEB 6.0 Vdc
IC 0.5 Adc
ICM 1.0 Adc
IB 1.0 Adc
PD
20 W
0.16 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 150 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC registered data.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
6.25
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 12
1
http://onsemi.com
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250−350 VOLTS, 20 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
2
N565xG
Y
WW
2N565x
G
= Year
= Work Week
= Device Code
x = 5 or 7
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N5655G
TO−225
(Pb−Free)
500 Units / Bulk
2N5657G
TO−225
(Pb−Free)
500 Units / Bulk
Publication Order Number:
2N5655/D



No Preview Available !

2N5655G pdf
2N5655G, 2N5657G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc (inductive), L = 50 mH)
2N5655G
2N5657G
VCEO(sus)
Vdc
250 −
350 −
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
2N5655G
2N5657G
V(BR)CEO
Vdc
250 −
350 −
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
2N5655G
(VCE = 250 Vdc, IB = 0)
2N5657G
ICEO
mAdc
0.1
0.1
Collector Cutoff Current
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
2N5655G
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
2N5657G
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5655G
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5657G
ICEX
mAdc
0.1
0.1
1.0
1.0
Collector Cutoff Current
(VCB = 275 Vdc, IE = 0)
2N5655G
(VCB = 375 Vdc, IE = 0)
2N5657G
ICBO
mAdc
10
10
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
mAdc
10
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
25
30 250
15 −
5.0 −
Collector−Emitter Saturation Voltage (Note 3)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
(IC = 500 mAdc, IB = 100 mAdc)
VCE(sat)
Vdc
1.0
2.5
10
Base−Emitter Voltage
(IC = 100 mAdc, VCE = 10 Vdc) (Note 3)
VBE Vdc
− 1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4)
fT MHz
10 −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
pF
25
Small−Signal Current Gain
(IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://onsemi.com
2



Part Number 2N5655G
Description Plastic NPN Silicon High-Voltage Power Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 5 Pages
PDF Download
2N5655G pdf
Download PDF File
2N5655G pdf
View for Mobile



Featured Datasheets

Part Number Description Manufacturers PDF
2N5653 JFET SWITCHING 2N5653
Motorola
PDF
2N5653 Trans JFET N-CH Si 3-Pin TO-92 2N5653
New Jersey Semiconductor
PDF
2N5653A Trans JFET N-CH Si 3-Pin TO-92 2N5653A
New Jersey Semiconductor
PDF
2N5654 JFET SWITCHING 2N5654
Motorola
PDF
2N5654 Trans JFET N-CH Si 3-Pin TO-92 2N5654
New Jersey Semiconductor
PDF
2N5655 POWER TRANSISTORS NPN SILICON 2N5655
ON Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components