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  ON Semiconductor Electronic Components Datasheet  


2N5555

JFET Switching


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ON Semiconductort
JFET Switching
N–Channel — Depletion
3
GATE
1 DRAIN
2N5555
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VDG
VGS
IGF
PD
TJ
Tstg
Value
25
25
25
10
350
2.8
–65 to +150
–65 to +150
2 SOURCE
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
SMALL–SIGNAL CHARACTERISTICS
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Symbol
V(BR)GSS
IGSS
ID(off)
IDSS
VGS(f)
VDS(on)
rDS(on)
rds(on)
Ciss
Crss
td(on)
tr
td(off)
tf
1
2
3
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
Min Max Unit
25 — Vdc
— 1.0 nAdc
— 10 nAdc
— 2.0 µAdc
15 — mAdc
— 1.0 Vdc
— 1.5 Vdc
— 150 Ohms
— 150 Ohms
— 5.0 pF
— 1.2 pF
— 5.0 ns
— 5.0 ns
— 15 ns
— 10 ns
© Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3
1
Publication Order Number:
2N5555/D



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2N5555
PULSE
GENERATOR
(50 OHMS)
50 OHM COAXIAL CABLE
1.0 k
1.0 k
50
INPUT PULSE
ąRISE TIME < 1.0 ns
ąFALL TIME < 1.0 ns
ąNOMINAL VALUE OF ON" PULSE WIDTH = 400 ns
ąDUTY CYCLE 1.0%
ąGENERATOR SOURCE IMPEDANCE = 50 OHMS
VDD
50 OHM
COAXIAL
CABLE
10 k
PULSE WIDTH
TEKTRONIX
567
SAMPLING
SCOPE
50%
INPUT 10%
90%
INPUT PULSE
RISE TIME
Rin =
50 OHMS
OUTPUT
td(on)
10%
90%
td(off)
50%
10%
VGS(on)
VGS(off)
INPUT PULSE
FALL TIME
10%
90% 90%
tr tf
Figure 1. Switching Times Test Circuit
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
bis @ IDSS
gis @ IDSS
gis @ 0.25 IDSS
bis @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 2. Input Admittance (yis)
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
10
20 30
grs @ IDSS, 0.25 IDSS
50 70 100 200 300 500 700 100
f, FREQUENCY (MHz)
Figure 3. Reverse Transfer Admittance (yrs)
20
10
7.0 gfs @ IDSS
5.0
3.0 gfs @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30
50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 4. Forward Transadmittance (yfs)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
http://onsemi.com
2
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 100
f, FREQUENCY (MHz)
Figure 5. Output Admittance (yos)



Part Number 2N5555
Description JFET Switching
Maker ON Semiconductor - ON Semiconductor
Total Page 8 Pages
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