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  ON Semiconductor Electronic Components Datasheet  


2N5460

JFET Amplifiers



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2N5460 pdf
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2N5460, 2N5461, 2N5462
JFET Amplifier
P−Channel − Depletion
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain − Gate Voltage
Reverse Gate − Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGSR
IG(f)
PD
40 Vdc
40 Vdc
10 mAdc
350 mW
2.8 mW/°C
Junction Temperature Range
TJ −65 to +135 °C
Storage Channel Temperature Range
Tstg − 65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
2 DRAIN
3
GATE
1 SOURCE
123
TO−92
CASE 29
STYLE 7
MARKING DIAGRAM
2N
546x
AYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 5
1
2N546x = Device Code
x = 0, 1, or 2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5460/D



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2N5460 pdf
2N5460, 2N5461, 2N5462
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
(VGS = 30 Vdc, VDS = 0, TA = 100°C)
Gate −Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 mAdc)
2N5460, 2N5461, 2N5462
2N5460, 2N5461, 2N5462
2N5460, 2N5461, 2N5462
V(BR)GSS
IGSS
2N5460
2N5461
2N5462
VGS(off)
40
0.75
1.0
1.8
− Vdc
5.0 nAdc
1.0 mAdc
6.0 Vdc
7.5
9.0
Gate −Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
(VDS = 15 Vdc, ID = 0.2 mAdc)
(VDS = 15 Vdc, ID = 0.4 mAdc)
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5460
2N5461
2N5462
VGS
2N5460
2N5461
2N5462
IDSS
Vdc
0.5 − 4.0
0.8 − 4.5
1.5 − 6.0
−1.0 − −5.0 mAdc
−2.0 − −9.0
− 4.0
− 16
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5460
2N5461
2N5462
yfs
1000 − 4000 mmhos
1500 − 5000
2000 − 6000
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Equivalent Short−Circuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)
yos
Ciss
Crss
en
− − 75 mmhos
− 5.0 7.0 pF
− 1.0 2.0 pF
− 60 115 nVń ǸHz
ORDERING INFORMATION
2N5460
Device
Package
TO−92
Shipping
2N5460G
2N5461
TO−92
(Pb−Free)
TO−92
1000 Units / Box
2N5461G
TO−92
(Pb−Free)
2N5461RLRA
2N5461RLRAG
TO−92
TO−92
(Pb−Free)
2000 / Tape & Reel
2N5462
2N5462G
TO−92
TO−92
(Pb−Free)
1000 Units / Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2



Part Number 2N5460
Description JFET Amplifiers
Maker ON Semiconductor - ON Semiconductor
Total Page 5 Pages
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