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2N5457

JFETs-General Purpose


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2N5457, 2N5458
Preferred Device
JFETs − General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
N−Channel for Higher Gain
Drain and Source Interchangeable
High AC Input Impedance
High DC Input Resistance
Low Transfer and Input Capacitance
Low Cross−Modulation and Intermodulation Distortion
Unibloc Plastic Encapsulated Package
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Source Voltage
Drain −Gate Voltage
Reverse Gate −Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
VDG
VGSR
IG
PD
25 Vdc
25 Vdc
−25 Vdc
10 mAdc
310 mW
2.82 mW/°C
Operating Junction Temperature
TJ 135 °C
Storage Temperature Range
Tstg − 65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 5
1
http://onsemi.com
1 DRAIN
3
GATE
2 SOURCE
MARKING
DIAGRAM
2N
TO−92
CASE 29
STYLE 5
545x
AYWWG
G
123
2N545x = Device Code
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
2N5457
2N5457G
2N5458
TO−92
TO−92
(Pb−Free)
TO−92
1000 Units/Box
1000 Units/Box
1000 Units/Box
2N5458G
TO−92
(Pb−Free)
1000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5457/D



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2N5457 pdf
2N5457, 2N5458
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −10 mAdc, VDS = 0)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0)
(VGS = −15 Vdc, VDS = 0, TA = 100°C)
Gate−Source Cutoff Voltage
(VDS = 15 Vdc, iD = 10 nAdc)
2N5457
2N5458
Gate−Source Voltage
(VDS = 15 Vdc, iD = 100 mAdc)
(VDS = 15 Vdc, iD = 200 mAdc)
ON CHARACTERISTICS
2N5457
2N5458
Zero−Gate−Voltage Drain Current (Note 1)
(VDS = 15 Vdc, VGS = 0)
2N5457
2N5458
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1)
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
2N5457
2N5458
Output Admittance Common Source (Note 1)
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
1. Pulse Width 630 ms, Duty Cycle 10%.
Symbol
V(BR)GSS
IGSS
VGS(off)
VGS
IDSS
|Yfs|
|Yos|
Ciss
Crss
Min Typ Max Unit
−25 −
− Vdc
1.0
nAdc
− − −200
−0.5 − −6.0 Vdc
−1.0 − −7.0
− −2.5 −
− −3.5 −
Vdc
1.0 3.0 5.0 mAdc
2.0 6.0 9.0
1000
1500
3000
4000
5000
5500
mmhos
− 10 50 mmhos
− 4.5 7.0 pF
− 1.5 3.0 pF
http://onsemi.com
2



Part Number 2N5457
Description JFETs-General Purpose
Maker ON Semiconductor - ON Semiconductor
Total Page 5 Pages
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