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  ON Semiconductor Electronic Components Datasheet  


2N5401G

Amplifier Transistors



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2N5401G pdf
2N5400, 2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol 2N5400 2N5401 Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
120 150
130 160
5.0
600
Vdc
Vdc
Vdc
mAdc
625 mW
5.0 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3 °C/W
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
MARKING DIAGRAM
2N
540x
AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 1
1
Publication Order Number:
2N5400/D



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2N5401G pdf
2N5400, 2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5400
2N5401
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
2N5400
2N5401
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
2N5400
2N5401
2N5400
2N5401
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2N5400
2N5401
2N5400
2N5401
2N5400
2N5401
Symbol
Min
Max Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
120
150
130
160
5.0
Vdc
Vdc
− Vdc
100 nAdc
50
100 mAdc
50
50 nAdc
hFE
VCE(sat)
VBE(sat)
30
50
40
60
40
50
180
240
Vdc
0.2
0.5
Vdc
1.0
1.0
fT
Cobo
hfe
NF
MHz
100 400
100 300
− 6.0 pF
30 200
40 200
− 8.0 dB
http://onsemi.com
2



Part Number 2N5401G
Description Amplifier Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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