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2N5209

Amplifier Transistors(NPN Silicon)



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2N5209 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
NPN Silicon
Order this document
by 2N5209/D
2N5209
2N5210
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
50 Vdc
50 Vdc
4.0 Vdc
50 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
ICBO
IEBO
50
50
Max Unit
— Vdc
— Vdc
50 nAdc
50 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1



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2N5209 pdf
2N5209 2N5210
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
2N5209
2N5210
hFE —
100 300
200 600
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 k,
f = 1.0 kHz)
2N5209
2N5210
2N5209
2N5210
2N5209
2N5210
2N5209
2N5210
150 —
250 —
150 —
250 —
VCE(sat)
0.7 Vdc
VBE(on)
0.85 Vdc
fT 30 — MHz
Ccb — 4.0 pF
hfe —
150 600
250 900
NF dB
— 3.0
— 2.0
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 k,
f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N5209
2N5210
— 4.0
— 3.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Part Number 2N5209
Description Amplifier Transistors(NPN Silicon)
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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