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2N5192G

Silicon NPN Power Transistors



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2N5192G pdf
2N5190G, 2N5191G,
2N5192G
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, − excellent safe area limits. Complement to PNP
2N5194, 2N5195.
Features
Epoxy Meets UL 94 V−0 @ 0.125 in.
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N5190G
2N5191G
2N5192G
VCEO
40
60
80
Vdc
Collector−Base Voltage
2N5190G
2N5191G
2N5192G
VCBO
40
60
80
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
IC
IB
PD
5.0 Vdc
4.0 Adc
1.0 Adc
40 W
320 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
3.12
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 14
1
http://onsemi.com
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
COLLECTOR
2
3
BASE
1
EMITTER
TO−225
CASE 77
STYLE 1
123
MARKING DIAGRAM
YWW
2
N519xG
Y = Y ear
WW = W ork Week
2N519x = Device Code
x = 0, 1, or 2
G = Pb−Free Package
ORDERING INFORMATION
Device
2N5190G
2N5191G
2N5192G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
500 Units/Box
Publication Order Number:
2N5191/D
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2N5192G pdf
2N5190G, 2N5191G, 2N5192G
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
2N5190G
2N5191G
2N5192G
VCEO(sus)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N5190G
(VCE = 60 Vdc, IB = 0)
2N5191G
(VCE = 80 Vdc, IB = 0)
2N5192G
ICEO
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N5190G
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N5191G
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N5192G
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5190G
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5191G
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5192G
ICEX
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N5190G
(VCB = 60 Vdc, IE = 0)
2N5191G
(VCB = 80 Vdc, IE = 0)
2N5192G
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
IEBO
hFE
Collector−Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*JEDEC Registered Data.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
fT
Min
40
60
80
25
20
10
7.0
2.0
Max Unit
Vdc
mAdc
1.0
1.0
1.0
mAdc
0.1
0.1
0.1
2.0
2.0
2.0
mAdc
0.1
0.1
0.1
mAdc
1.0
100
80
Vdc
0.6
1.4
Vdc
1.2
MHz
http://onsemi.com
2



Part Number 2N5192G
Description Silicon NPN Power Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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