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2N5190

Silicon NPN Power Transistors



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2N5190 pdf
2N5190, 2N5191, 2N5192
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, — excellent safe area limits. Complement to PNP
2N5194, 2N5195.
Features
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in.
Pb−Free Packages are Available*
http://onsemi.com
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N5190
2N5191
2N5192
VCEO
40
60
80
Vdc
Collector−Base Voltage
2N5190
2N5191
2N5192
VCBO
40
60
80
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VEBO
IC
IB
PD
5.0 Vdc
4.0 Adc
1.0 Adc
40 W
320 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case RqJC
3.12 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 12
1
321
TO−225AA
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
2
N519xG
Y=
WW =
2N519x =
G=
Year
Work Week
Device Code
x = 0, 1, or 2
Pb−Free Package
ORDERING INFORMATION
Device
2N5190
Package
TO−225AA
Shipping
500 Units/Box
2N5190G
TO−225AA
(Pb−Free)
500 Units/Box
2N5191
TO−225AA
500 Units/Box
2N5191G
TO−225AA
(Pb−Free)
500 Units/Box
2N5192
TO−225AA
500 Units/Box
2N5192G
TO−225AA
(Pb−Free)
500 Units/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N5191/D



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2N5190 pdf
2N5190, 2N5191, 2N5192
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N5190
40 − Vdc
2N5191
60 −
2N5192
80 −
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N5190
2N5191
2N5192
ICEO
1.0 mAdc
1.0
1.0
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5190
2N5191
2N5192
2N5190
2N5191
2N5192
ICEX
0.1 mAdc
0.1
0.1
2.0
2.0
2.0
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N5190
2N5191
2N5192
ICBO
0.1 mAdc
0.1
0.1
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
− 1.0 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.5 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5190/2N5191
2N5192
2N5190/2N5191
2N5192
hFE
25 100
20 80
10 −
7.0 −
Collector−Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
− 0.6 Vdc
− 1.4
Base−Emitter On Voltage
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
− 1.2 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*JEDEC Registered Data.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
fT 2.0 − MHz
http://onsemi.com
2



Part Number 2N5190
Description Silicon NPN Power Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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