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2N5089

Amplifier Transistor(NPN Silicon)



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2N5089 pdf
2N5088, 2N5089
Amplifier Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Symbol
2N5088
2N5089
VCEO
Value
30
25
Unit
Vdc
Collector − Base Voltage
VCBO
Vdc
2N5088
35
2N5089
30
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
3.0 Vdc
50 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Ambient RqJA
(Note 1)
Max
200
Unit
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. RqJA is measured with the device soldered into a typical printed circuit board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
http://onsemi.com
3 COLLECTOR
2
BASE
1 EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
508x
AYWW G
G
x = 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
2N5088G
TO−92 5000 Units/Bulk
(Pb−Free)
2N2088RLRAG TO−92 2000/Tape & Reel
(Pb−Free)
2N5089G
TO−92 5000 Units/Bulk
(Pb−Free)
2N2089RLRE
TO−92 2000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N5088/D



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2N5089 pdf
2N5088, 2N5089
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
2N5088
30 −
2N5089
25 −
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
2N5088
35 −
2N5089
30 −
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
ON CHARACTERISTICS
2N5088
2N5089
ICBO
IEBO
nAdc
− 50
− 50
nAdc
− 50
− 100
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
hFE
300 900
400 1200
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
350 −
450 −
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base −Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2N5088
2N5089
300 −
400 −
VCE(sat) − 0.5
VBE(on)
− 0.8
Vdc
Vdc
2N5088
2N5089
2N5088
2N5089
fT
Ccb
Ceb
hfe
NF
50 −
− 4.0
− 10
350 1400
450 1800
− 3.0
− 2.0
MHz
pF
pF
dB
RS in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2



Part Number 2N5089
Description Amplifier Transistor(NPN Silicon)
Maker ON Semiconductor - ON Semiconductor
Total Page 5 Pages
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