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2N5087

Amplifier Transistor(PNP Silicon)



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2N5087 pdf
2N5087
Preferred Device
Amplifier Transistor
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
50 Vdc
50 Vdc
3.0 Vdc
50 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
3 COLLECTOR
2
BASE
1 EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
5087
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
2N5087
TO−92
5000 Units / Bulk
2N5087G
TO−92
5000 Units / Bulk
(Pb−Free)
2N5087RLRAG TO−92 2000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5087/D



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2N5087 pdf
2N5087
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
V(BR)CEO
Vdc
(IC = 1.0 mAdc, IB = 0)
50 −
Collector−Base Breakdown Voltage
V(BR)CBO
Vdc
(IC = 100 mAdc, IE = 0)
50 −
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
nAdc
− 50
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
nAdc
− 50
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1)
hFE
250 800
250 −
250 −
Collector−Emitter Saturation Voltage
VCE(sat)
Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)
− 0.3
Base−Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
Vdc
− 0.85
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
fT
MHz
40 −
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
pF
− 4.0
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
250 900
Noise Figure
(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
NF
dB
− 2.0
− 2.0
http://onsemi.com
2



Part Number 2N5087
Description Amplifier Transistor(PNP Silicon)
Maker ON Semiconductor - ON Semiconductor
Total Page 7 Pages
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