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2N5038

NPN Silicon Transistors



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2N5038 pdf
2N5038
NPN Silicon Transistors
Fast switching speeds and high current capacity ideally suit these
parts for use in switching regulators, inverters, wide-band amplifiers
and power oscillators in industrial and commercial applications.
Features
ăHigh Speed - tf = 0.5 ms (Max)
ăHigh Current - IC(max) = 30 Amps
ăLow Saturation - VCE(sat) = 2.5 V (Max) @ IC = 20 Amps
ăPb-Free Package is Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -
Continuous
Peak (Note 2)
Base Current -
Continuous
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VCEV
VEBO
IC
ICM
IB
PD
TJ, Tstg
Value
90
Unit
Vdc
150 Vdc
150 Vdc
7 Vdc
20 Adc
30
5 Adc
140 W
0.8 W/_C
-ā65 to +200 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction-to-Case
RqJC
1.25 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width v 10 ms, Duty Cycle v 50%.
http://onsemi.com
20 AMPERE
NPN SILICON
POWER TRANSISTORS
90 VOLTS - 140 WATTS
TO-204AA (TO-3)
CASE 1-07
STYLE 1
MARKING DIAGRAMS
2N5038G
AYYWW
MEX
2N5038
IC = 12 AMPS
IB1 = IB2 = 1.2 AMPS
+11 V
0
-ā9 V
10 W
1N4933
VCC
+ā30 V
RC
2.5
PW = 20 ms
DUTY CYCLE = 1%
-ā5 V
Figure 1. Switching Time Test Circuit
G
A
YY
WW
MEX
= Pb-Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 12
1
Publication Order Number:
2N5038/D



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2N5038 pdf
2N5038
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Sustaining Voltage (Note 4)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
90
Vdc
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 140 Vdc, VBE(off) = 1.5 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
mAdc
- 50
- 10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 7 Vdc, IC = 0)
IEBO
mAdc
-5
- 50
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC=12Adc,VCE =5Vdc)
hFE -
20 100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase-Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 5 Adc)
VCE(sat)
Vdc
- 2.5
VBE(sat)
Vdc
- 3.3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMagnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRatio (IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRESISTIVE LOAD
|hfe|
-
12 -
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time
(VCC = 30 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ3. Indicates JEDEC Registered Data.
tr - 0.5 ms
ts - 1.5 ms
4. Pulse Test: Pulse Width v 300, ms, Duty Cycle v 2%.
ORDERING INFORMATION
Device
2N5038
2N5038G
Package
TO-204
TO-204
(Pb-Free)
Shipping
100 Units / Tray
100
50
20
10 dc
5
2
1 BONDING WIRE LIMIT
THERMAL LIMIT
0.5 SECOND BREAKDOWN LIMIT
0.2 TC = 25°C
0.1
1
2 3 5 7 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Second breakdown pulse limits are valid for duty cycles
to 10%. At high case temperatures, thermal limitations may
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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2



Part Number 2N5038
Description NPN Silicon Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 3 Pages
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