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2N4922G

Medium-Power Plastic NPN Silicon Transistors



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2N4922G pdf
2N4921G, 2N4922G,
2N4923G
Medium-Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications.
Features
Low Saturation Voltage
Excellent Power Dissipation Due to Thermopadt Construction
Excellent Safe Operating Area
Complement to PNP 2N4920G
These Devices are Pb−Free and are RoHS Compliant**
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCEO
40
60
80
Vdc
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCB Vdc
40
60
80
Emitter Base Voltage
Collector Current − Continuous (Note 1)
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VEB
IC
ICM
IB
PD
5.0 Vdc
1.0 Adc
3.0 Adc
1.0 Adc
30 W
0.24 mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6).
THERMAL CHARACTERISTICS (Note 2)
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case RqJC
4.16
_C/W
2. Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
** For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
1
http://onsemi.com
1.0 AMPERE
GENERAL PURPOSE
POWER TRANSISTORS
40−80 VOLTS, 30 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
2
N492xG
Y = Year
WW = Work Week
2N492x = Device Code
x = 1, 2, or 3
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N4921G
TO−225
(Pb−Free)
500 Units / Box
2N4922G
TO−225
(Pb−Free)
500 Units / Box
2N4923G
TO−225
(Pb−Free)
500 Units / Box
Publication Order Number:
2N4921/D



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2N4922G pdf
2N4921G, 2N4922G, 2N4923G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
2N4921G
2N4922G
2N4923G
VCEO(sus)
40
60
80
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N4921G
(VCE = 30 Vdc, IB = 0)
2N4922G
(VCE = 40 Vdc, IB = 0)
2N4923G
ICEO
mAdc
0.5
0.5
0.5
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ICEX
ICBO
IEBO
mAdc
0.1
0.5
mAdc
0.1
mAdc
1.0
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter On Voltage (Note 3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
VCE(sat)
VBE(sat)
VBE(on)
40
30
10
150
Vdc
0.6
Vdc
1.3
Vdc
1.3
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT MHz
3.0 −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob pF
− 100
Small−Signal Current Gain
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: PW 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2



Part Number 2N4922G
Description Medium-Power Plastic NPN Silicon Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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