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2N4410

Amplifier Transistor(NPN Silicon)



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2N4410 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
NPN Silicon
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by 2N4410/D
2N4410
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
80
120
5.0
250
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms)
Collector – Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CEX
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
80 — Vdc
120 — Vdc
120 — Vdc
5.0 — Vdc
µAdc
— 0.01
— 1.0
— 0.1 µAdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1



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2N4410
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
Base – Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded)
2. fT = |hfe| ftest.
Symbol
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Ccb
Ceb
Min
60
60
60
500
300
200 TJ = 125°C
25°C
100
– 55°C
50
30
20
10
7.0
5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (mA)
10
Figure 1. DC Current Gain
20 30
Max Unit
400
0.2 Vdc
0.8 Vdc
0.8 Vdc
300 MHz
12 pF
50 pF
VCE = 1.0 V
VCE = 5.0 V
50 70 100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
IC = 1.0 mA
0.01 0.02
10 mA
30 mA
100 mA
0.05 0.1 0.2
0.5 1.0 2.0
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
5.0 10
20
50
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Part Number 2N4410
Description Amplifier Transistor(NPN Silicon)
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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