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2N4400

General Purpose Transistors(NPN Silicon)


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2N4400 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4400/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2N4400
2N4401*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
60
6.0
600
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
60 — Vdc
6.0 — Vdc
— 0.1 µAdc
— 0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1



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2N4400 pdf
2N4400 2N4401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N4401
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
Symbol
hFE
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
(IC = 150 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
(IC = 500 mAdc, VCE = 2.0 Vdc)
2N4400
2N4401
Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
2N4400
2N4401
Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
VCE(sat)
VBE(sat)
fT
Ccb
Ceb
hie
hre
hfe
hoe
td
tr
ts
tf
Min
20
20
40
40
80
50
100
20
40
0.75
200
250
0.5
1.0
0.1
20
40
1.0
Max Unit
150
300
0.4 Vdc
0.75
0.95 Vdc
1.2
MHz
6.5 pF
30 pF
k ohms
7.5
15
8.0 X 10–4
250
500
30 µmhos
15 ns
20 ns
225 ns
30 ns
+16 V
0
– 2.0 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 µs,
DUTY CYCLE 2.0%
< 2.0 ns
1.0 k
+ 30 V
200
CS* < 10 pF
+16 V
0
–14 V
1.0 to 100 µs,
DUTY CYCLE 2.0%
1.0 k
< 20 ns
+ 30 V
200
CS* < 10 pF
Figure 1. Turn–On Time
Scope rise time < 4.0 ns
– 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn–Off Time
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Part Number 2N4400
Description General Purpose Transistors(NPN Silicon)
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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