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2N4264

General Purpose Transistor(NPN Silicon)



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2N4264 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
NPN Silicon
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by 2N4264/D
2N4264
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
15
30
6.0
200
350
2.8
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
357
Thermal Resistance, Junction to Case
RqJC
125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C)
Collector Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
Vdc
15 —
Vdc
30 —
Vdc
6.0 —
µAdc
— 0.1
— 10
nAdc
— 100
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1



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2N4264
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = – 55°C)
(IC = 30 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)(1)
(IC = 200 mAdc, VCE = 1.0 Vdc)(1)
hFE —
25 —
40 160
20 —
40 —
30 —
20 —
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)(1)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)(1)
SMALL– SIGNAL CHARACTERISTICS
VCE(sat)
Vdc
0.22
0.35
VBE(sat)
Vdc
0.65 0.8
0.75 0.95
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT 300 — MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo — 8.0 pF
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0)
Cobo — 4.0 pF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Turn–On Time
(VCC = 10 Vdc, VEB(off) = 2.0 Vdc,
IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C)
VCC = 10 Vdc, (IC = 10 mAdc, for ts)
(IC = 100 mA for tf)
(IB1 = –10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C)
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc,
IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A)
td
tr
ts
tf
ton
— 8.0 ns
— 15 ns
— 20 ns
— 15 ns
— 25 ns
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A)
toff
— 35 ns
Storage Time
(VCC = 10 Vdc, IC = 10 mA,
IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B)
ts — 20 ns
Total Control Charge
(VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc)
(Fig. 3, Test Condition A)
QT — 80 pC
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Figure 1. Switching Time Equivalent Test Circuit
Test
Condition IC VCC RS RC CS(max) VBE(off) V1 V2 V3
mA V Ω Ω
pF
V VVV
A 10 3 3300 270 4
–1.5 10.55 –4.15 10.70
B 10 10 560 960 4
— — –4.65 6.55
C 100 10 560 96 12
–2.0 6.35 –4.65 6.55
V1
0
VEB(off)
ton
t1 V3
0
V2
< 2 ns
toff
t1
VCC
RC
RB
< 2 ns
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
CS
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Part Number 2N4264
Description General Purpose Transistor(NPN Silicon)
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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