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2N4123

General Purpose Transistors(NPN Silicon)


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2N4123 pdf
2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
2N4123
2N4124
VCEO
Value
30
25
Unit
Vdc
Collector−Base Voltage
2N4123
2N4124
VCBO
40
30
Vdc
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
5.0 Vdc
200 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
412x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
2N4123RLRM TO−92 2000 / Tape & Ammo
2N4124G
TO−92
5000 Units / Bulk
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N4123/D



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2N4123 pdf
2N4123, 2N4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Symbol
Min Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IE = 0)
V(BR)CEO
Vdc
2N4123
30 −
2N4124
25 −
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Vdc
2N4123
40 −
2N4124
30 −
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)EBO
5.0
Vdc
ICBO
nAdc
− 50
IEBO
nAdc
− 50
DC Current Gain (Note 1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
hFE
50 150
120 360
(IC = 50 mAdc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz)
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
VCE(sat)
VBE(sat)
25 −
60 −
Vdc
− 0.3
Vdc
− 0.95
2N4123
2N4124
2N4123
2N4124
2N4123
2N4124
fT
Cibo
Ccb
hfe
|hfe|
250 −
300 −
− 8.0
− 4.0
50 200
120 480
2.5 −
3.0 −
MHz
pF
pF
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N4123
2N4124
2N4123
2N4124
NF
50 200
120 480
− 6.0
− 5.0
dB
http://onsemi.com
2



Part Number 2N4123
Description General Purpose Transistors(NPN Silicon)
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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