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2N4033

Small Signal Switching Transistor



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2N4033 pdf
2N4029, 2N4033
Small Signal Switching
Transistor
PNP Silicon
Features
MIL−PRF−19500/512 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
2N4029
2N4033
VCEO
VCBO
VEBO
IC
PT
−80
−80
−5.0
1
0.5
0.8
Vdc
Vdc
Vdc
Adc
W
Total Device Dissipation @ TC = 25°C
PT
W
2N4029
1.0
2N4033
4.0
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
2N4029
2N4033
RqJA
°C/W
325
195
Thermal Resistance, Junction−to−Case
2N4029
2N4033
RqJC
°C/W
150
40
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−18
CASE 206AA
STYLE 1
2N4029
TO−39
CASE 205AB
STYLE 1
2N4033
ORDERING INFORMATION
Level
Device Package Shipping
JAN
JANTX
JANTXV
2N4029
2N4033
TO−18
TO−39
Bulk
Bulk
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 1
1
Publication Order Number:
2N4029/D



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2N4033 pdf
2N4029, 2N4033
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc)
Collector −Emitter Cutoff Current
(VCE = −60 Vdc)
Collector−Base Cutoff Current
(VCB = −80 Vdc, IE = 0)
(VCB = −60 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = −5 Vdc)
(VEB = −3 Vdc)
ON CHARACTERISTICS (Note 1)
V(BR)CEO
ICES
ICBO
IEBO
−80
Vdc
nAdc
−25
−10 mA
−10 nA
−10 mA
−25 nA
DC Current Gain
(IC = −0.1 mAdc, VCE = −5 Vdc)
(IC = −100 mAdc, VCE = −5 Vdc)
(IC = −500 mAdc, VCE = −5 Vdc)
(IC = −1 Adc, VCE = −5 Vdc)
Collector −Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1 Adc, IB = −100 mAdc)
Base −Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
50 −
100 300
70 −
25 −
Vdc
− −0.15
− −0.5
− −1.0
Vdc
− −0.9
− −1.2
Magnitude of Small−Signal Current Gain
(IC = −50 mAdc, VCE = −10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)
SWITCHING CHARACTERISTICS
|hfe|
Cobo
Cibo
1.5 6.0
pF
− 20
pF
− 80
Delay Time
(Reference Figure in MIL−PRF−19500/512)
td − 15 ns
Rise Time
(Reference Figure in MIL−PRF−19500/512)
tr − 25 ns
Storage Time
(Reference Figure in MIL−PRF−19500/512)
ts − 175 ns
Fall Time
(Reference Figure in MIL−PRF−19500/512)
tf − 35 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2



Part Number 2N4033
Description Small Signal Switching Transistor
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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