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2N3905

General Purpose Transistors(PNP Silicon)



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2N3905 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3905/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
40 Vdc
5.0 Vdc
200 mAdc
625 mW
5.0 mW/°C
Total Power Dissipation @ TA = 60°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
PD
250 mW
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS(1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. Indicates Data in addition to JEDEC Requirements.
v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
2N3905
2N3906*
*Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
40
5.0
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
50 nAdc
1



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2N3905 pdf
2N3905 2N3906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
Symbol
hFE
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
Min
30
60
40
80
50
100
30
60
15
30
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAd
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
VCE(sat)
VBE(sat)
0.65
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
200
250
0.5
2.0
0.1
0.1
50
100
1.0
3.0
td —
tr —
ts —
tf —
Max Unit
150
300
Vdc
0.25
0.4
Vdc
0.85
0.95
MHz
4.5 pF
10.0 pF
k
8.0
12
X 10– 4
5.0
10
200
400
mmhos
40
60
dB
5.0
4.0
35 ns
35 ns
200 ns
225
60 ns
75
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Part Number 2N3905
Description General Purpose Transistors(PNP Silicon)
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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