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2N3700

Low Power Transistor



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2N3700 pdf
2N3700
Low Power Transistor
NPN Silicon
Features
MILPRF19500/391 Qualified
Available as JAN, JANTX, and JANTXV
Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
80
Collector Base Voltage
VCBO
140
Emitter Base Voltage
VEBO
7.0
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
IC 1.0
PT 500
Total Device Dissipation @ TC = 25°C
PT 1.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+200
Unit
Vdc
Vdc
Vdc
Adc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(Note 1)
Symbol
RqJA
Max
325
Unit
°C/W
Thermal Resistance, Junction to Case
RqJC
150 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. This number assumes a substrate of 1 oz. thick copper and a copper area of
550 mm2.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO18
CASE 206AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N3700
JANTX2N3700
TO18
Bulk
JANTXV2N3700
© Semiconductor Components Industries, LLC, 2011
July, 2011 Rev. 0
1
Publication Order Number:
2N3700/D



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2N3700 pdf
2N3700
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 10 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 1.0 Adc, VCE = 10 Vdc) (Note 2)
Collector Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
SmallSignal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
2. Pulse Test: See section 4 of MILSTD750.
Symbol
hFE
VCE(sat)
VBE(sat)
Cobo
|hfe|
Min Max
50 300
90
100 300
50 300
15
0.2
0.5
1.1
12
5.0 20
Unit
Vdc
Vdc
pF
http://onsemi.com
2



Part Number 2N3700
Description Low Power Transistor
Maker ON Semiconductor - ON Semiconductor
Total Page 3 Pages
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