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2N3637L

Low Power Transistors



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2N3637L pdf
2N3634, 2N3634L, 2N3635,
2N3635L, 2N3636,
2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
Features
MIL−PRF−19500/357 Qualified
Available as JAN, JANTX, JANTXV and JANHC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol 2N3634/L 2N3636/L
2N3635/L 2N3637/L
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current
− Continuous
VCEO
VCBO
VEBO
IC
−140
−175
−140
−175
−5.0
1.0
Vdc
Vdc
Vdc
Adc
Total Device Dissipation
@ TA = 25°C
Total Device Dissipation
@ TC = 25°C
Operating and Storage Junc-
tion Temperature Range
PT
PT
TJ, Tstg
1.0
5.0
−65 to +200
W
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
RqJA
175 °C/W
Thermal Resistance, Junction to Case
RqJC
35 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Level
Device
2N3634
2N3635
JAN
JANTX
JANTXV
JANHC
2N3636
2N3637
2N3634L
2N3635L
2N3636L
2N3637L
Package
TO−39
TO−5
Shipping
Bulk
Bulk
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 1
1
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−5
CASE 205AA
STYLE 1
2N3634L
2N3635L
2N3636L
2N3637L
TO−39
CASE 205AB
STYLE 1
2N3634
2N3635
2N3636
2N3637
Publication Order Number:
2N3637/D



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2N3637L pdf
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
2N3634, 2N3635
2N3636, 2N3637
Emitter−Base Cutoff Current
(VEB = −3.0 V)
(VEB = −5.0 V)
Collector−Emitter Cutoff Current
(VCE = −100 V)
Collector−Base Cutoff Current
(VCB = −100 V)
(VCB = −140 V)
(VCB = −175 V)
ON CHARACTERISTICS (Note 1)
2N3634, 2N3635
2N3636, 2N3637
DC Current Gain
(IC = −0.1 mA, VCE = −10 V)
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −150 mA, VCE = −10 V)
DC Current Gain
(IC = −0.1 mA, VCE = −10 V)
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −150 mA, VCE = −10 V)
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −50 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −50 mA, IB = −5.0 mA)
SMALL−SIGNAL CHARACTERISTICS
2N3634, 2N3636
2N3635, 2N3637
Magnitude of Small−Signal Current Gain
(IC = −30 mA, VCE = −30 V, f = 100 MHz)
2N3634, 2N3636
2N3635, 2N3637
Small−Signal Current Gain
(IC = −10 mA, VCE = −10 V, f = 1 kHz)
2N3634, 2N3636
2N3635, 2N3637
Output Capacitance
(VCB = −20 V, IE = 0 A, 100 kHz f 1.0 MHz)
Input Capacitance
(VEB = −1.0 V, IC = 0 A, 100 kHz f 1.0 MHz)
Noise Figure
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 100 Hz)
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 1.0 kHz)
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 10 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(Reference Figure 11 in MIL−PRF−19500/357)
Rise Time
(Reference Figure 11 in MIL−PRF−19500/357)
Storage Time
(Reference Figure 11 in MIL−PRF−19500/357)
Fall Time
(Reference Figure 11 in MIL−PRF−19500/357)
Turn−Off Time
(Reference Figure 11 in MIL−PRF−19500/357)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
IEBO
ICEO
ICBO
hFE
hFE
VCE(sat)
VBE(sat)
|hfe|
hfe
Cobo
Cibo
NF
td
tr
ts
tf
toff
Min
−140
−175
25
45
50
50
30
55
90
100
100
60
−0.65
1.5
2.0
40
80
Max
−50
−10
−10
−100
−10
−10
150
300
−0.3
−0.6
−0.8
−0.9
8.0
8.5
160
320
10
75
5.0
3.0
3.0
100
100
500
150
600
Unit
V
nA
mA
mA
nA
mA
mA
V
V
pF
pF
dB
ns
ns
ns
ns
ns
http://onsemi.com
2



Part Number 2N3637L
Description Low Power Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 6 Pages
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