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2N3439

Low Power Transistor


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2N3439 pdf
2N3439
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Low Power Transistor
NPN Silicon
Features
MILPRF19500/368 Qualified
Available as JAN, JANTX, and JANTXV
Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
350
Collector Base Voltage
Emitter Base Voltage
VCBO
VEBO
450
7.0
Collector Current Continuous
IC 1.0
Total Device Dissipation @ TA = 25°C
PT 800
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
PT
TJ, Tstg
5.0
65 to
+200
Unit
Vdc
Vdc
Vdc
Adc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
175 °C/W
Thermal Resistance, Junction to Case
RqJC
30 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO39
CASE 205AB
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
2N3439
TO39
Bulk
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2011
February, 2011 Rev. P0
1
Publication Order Number:
2N3439/D



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2N3439
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
EmitterBase Cutoff Current
(VEB = 7.0 Vdc)
CollectorEmitter Cutoff Current
(VCE = 300 Vdc)
CollectorEmitter Cutoff Current
(VCE = 450 Vdc, VBE = 1.5 Vdc)
CollectorBase Cutoff Current
(VCE = 360 Vdc)
(VCE = 450 Vdc)
(VCE = 360 Vdc, TA = 150°C)
DC Current Gain (Note 1)
(IC = 0.2 mAdc, VCE = 10 Vdc)
(IC = 2.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc, TA = 55°C)
Collector Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 4.0 mAdc)
Base Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 4.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
Input Capacitance
(VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz)
SmallSignal ShortCircuit Forward Current Transfer Ratio
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SmallSignal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
SWITCHING CHARACTERISTICS
Turnon Time (Note 2)
(VCC = 200 Vdc, IC = 20 mAdc, IB1 = 2.0 mAdc)
Turnoff Time (Note 2)
(VCC = 200 Vdc, IC = 20 mAdc, IB1 = IB2 = 2.0 mAdc)
1. Pulse Test: See section 4 of MILSTD750.
2. See Figure 14 in MILPRF19500/368.
Symbol
IEBO
ICEO
ICEX
ICBO
hFE
VCE(sat)
VBE(sat)
Cobo
Cibo
hfe
|hfe|
ton
toff
Min Max
10
2.0
5.0
2.0
5.0
6.0
10
30
40 160
15
0.5
1.3
10
75
25
3.0 15
1.0
10
Unit
mAdc
mAdc
mAdc
mAdc
Vdc
Vdc
pF
pF
ms
ms
http://onsemi.com
2



Part Number 2N3439
Description Low Power Transistor
Maker ON Semiconductor - ON Semiconductor
Total Page 3 Pages
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