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  Microsemi Electronic Components Datasheet  


2N3251A

PNP BIPOLAR TRANSISTOR



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2N3251A pdf
Features
Meets MIL-S-19500/323
Collector-Base Voltage 60V
Collector Current: 200 mA
Fast Switching 370 nS
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
Maximum Ratings
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
@ TA = 25oC
Derate above 25oC
Total Device Dissipation
@ TC = 25oC
Derate above 25oC
Operating Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Mechanical Outline
2N3251A
60 Volts
200 mAmps
PNP
BIPOLAR
TRANSISTOR
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
TJ
TS
RθJA
RθJC
MAX.
-60
-60
-5.0
-200
0.36
2.4
1.2
8
-65 to
+175
-65 to
+175
417
146
UNIT
Vdc
Vdc
Vdc
mAdc
Watts
mW/oC
Watts
mW/oC
oC
oC
oC/W
oC/W
Datasheet# MSC0281A 5/19/97



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2N3251A pdf
2N3251A
Electrical Parameters (TA @ 25°C unless otherwise specified)
CHARACTERISTICS
Off Characteristics
Collector-Emitter Breakdown Voltage(1) (I C = -10 mAdc)
Collector-Base Breakdown Voltage (I C = -10 µAdc)
Emitter-Base Breakdown Voltage (I E = -10 µAdc)
Collector Cutoff Current (V CE = -40 Vdc, VEB = -3.0 Vdc)
( at 150 C )
Base Cutoff Current (V CE = -40 Vdc, VEB = -3.0 Vdc)
D.C. Current Gain
(IC = -0.1 mAdc, VCE = -1.0 Vdc)
(IC = -1.0 mAdc, VCE = -1.0 Vdc)
(Ic = -1.0mAdc, VCE= -1.0Vdc) @ -55C
(IC = -10 mAdc, VCE = -1.0 Vdc)(1)
(IC = -50 mAdc, VCE = -1.0 Vdc)(1)
Collector-Emitter Saturation Voltage(1)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
Base-Emitter Saturation Voltage(1)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(IC = -10 mAdc, VCE = -20 Vdc, f = 100MHz)
Output Capacitance
(VCB = -10 Vdc, IE = 0, 100kHz < f < 1MHz)
Input Capacitance
(VEB = -10 Vdc, IC = 0, 100kHz < f < 1MHz)
Input Impedance
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz)
Small—Signal Current Gain
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz)
Output Admittance
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz)
Collector Base Time Constant
(IC = -10 mA, VCE = -20 V, f = 31.8 MHz)
Noise Figure
(IC = -100 µA, VCE = -5.0 V, RS = 1.0k, f = 100 Hz)
Switching Speeds
(VCC = -3.0 Vdc, VBE = +0.5 Vdc
IC = -10 mAdc, IB1 = -1.0 mA)
(VCC = -10 mAdc, IB1 = IB1 = -1.0 mAdc)
(VCC = -3.0 V)
SYMBOL
BVCEO
BVCBO
BVEBO
ICEX
IBEX
hFE
VCE(Sat)
VBE(Sat)
/hfe/
COBO
CIBO
hje
hre
hfe
hoe
rb’CC
NF
ton
MIN.
-60
-60
-5.0
--
--
80
90
40
100
30
--
--
-0.6
--
3.0
--
--
2.0
--
100
10
5
--
--
toff --
TYP. MAX. UNIT
--
--
--
-20
-20
-50
--
--
--
300
--
-0.25
-0.5
-0.9
-1.2
Vdc
Vdc
Vdc
nA
uA
nAdc
--
Vdc
Vdc
9.0
pf
6.0
pf
8.0
kohms
12
x 10-4
20
--
400
µmhos
60
ps
250
dB
6.0
70 ns
300 ns
(1) Pulse Test: PW = 300 µs, Duty Cycle = 2.0%
Datasheet# MSC0281A 5/19/97



Part Number 2N3251A
Description PNP BIPOLAR TRANSISTOR
Maker Microsemi Corporation - Microsemi Corporation
Total Page 2 Pages
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