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2N3055

NPN POWER SILICON TRANSISTOR



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2N3055 pdf
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/407
Devices
2N3055
TECHNICAL DATA
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 250C (1)
@ TC = 250C (2)
Operating & Storage Temperature Range
VCEO
VCBO
VEBO
IB
IC
PT
Top, Tstg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 34.2 mW/0C for TA > +250C
2) Derate linearly @ 668 mW/0C for TC > +250C
RθJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBE = 100
Collector-Emitter Breakdown Voltage
VBE = -1.5 Vdc, IC = 200 mAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
Collector-Emitter Cutoff Current
VBE = -1.5 Vdc; VCE = 100 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
Value
70
100
7.0
7.0
15
6.0
117
-65 to +200
Max.
1.5
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
Symbol
V(BR)CEO
V(BR)CER
V(BR)CEX
ICEO
ICEX
IEBO
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
70 Vdc
80 Vdc
90 Vdc
1.0 mAdc
1.0 mAdc
1.0 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



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2N3055 pdf
2N3055 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min. Max.
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 4.0 Vdc
IC = 4.0 Adc, VCE = 4.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
IC = 4.0 Adc, IB = 0.4 Adc
IC = 10 Adc, IB = 3.3 Adc
Base-Emitter Saturation Voltage
IC = 4.0 Adc, VCE = 4.0 Vdc
hFE
VCE(sat)
VBE(sat)
40
20 60
5.0
0.75
2.0
1.4
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 4.0 Adc, VCE = 4.0 Vdc, f = 100 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
hfe
Cobo
8.0 40
700
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 4.0 Adc; IB1= 0.4 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 4.0 Adc; IB1 = -IB2 = 0.4 Adc
ton 6.0
toff 12
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 7.8 Vdc, IC = 15 Adc
Test 2
VCE = 70 Vdc, IC = 1.67 Adc
Switching Tests
TA = +250C; duty cycle 10%; RS 0.1
Test 1
tP = 5.0 ms; RBB1 = 2.0 ; VBB1 10 Vdc; RBB2 = 100 ; VCC 10 Vdc; VBB2 = 1.5 Vdc; IC = 15 Adc
Test 2
tP = 20 ms; RBB1 = 30 ; VBB1 10 Vdc; RBB2 = 100 ; VCC 10 Vdc; VBB2 = 1.5 Vdc; IC = 3.8 Adc
Unit
Vdc
Vdc
pF
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N3055
Description NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation - Microsemi Corporation
Total Page 2 Pages
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