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2N3055

Complementary Silicon Power Transistors



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2N3055 pdf
2N3055(NPN), MJ2955(PNP)
Preferred Device
Complementary Silicon
Power Transistors
Complementary silicon power transistors are designed for
general−purpose switching and amplifier applications.
Features
DC Current Gain − hFE = 20−70 @ IC = 4 Adc
Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VCEO
VCER
VCB
VEB
IC
IB
PD
60
70
100
7
15
7
115
0.657
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 65 to +200 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 6
1
http://onsemi.com
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 115 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
xxxx55G
AYYWW
MEX
xxxx55
G
A
YY
WW
MEX
= Device Code
xxxx = 2N30 or MJ20
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
ORDERING INFORMATION
Device
2N3055
2N3055G
MJ2955
Package
TO−204AA
TO−204AA
(Pb−Free)
TO−204AA
Shipping
100 Units / Tray
100 Units / Tray
100 Units / Tray
MJ2955G
TO−204AA
(Pb−Free)
100 Units / Tray
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N3055/D



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2N3055 pdf
2N3055(NPN), MJ2955(PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Thermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC= 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
RqJC
Max Unit
1.52 _C/W
Symbol
Min Max Unit
OFF CHARACTERISTICS*
Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0)
VCEO(sus)
60
− Vdc
Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS*(Note1)
VCER(sus)
70
− Vdc
ICEO
ICEX
− 0.7 mAdc
mAdc
− 1.0
− 5.0
IEBO
− 5.0 mAdc
DC Current Gain
hFE
(IC = 4.0 Adc, VCE = 4.0 Vdc)
20 70
(IC = 10 Adc, VCE = 4.0 Vdc)
5.0 −
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
− 1.1
3.0
Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSecond Breakdown Collector Current with Base Forward Biased
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
VBE(on)
Is/b
fT
hfe
fhfe
− 1.5 Vdc
2.87 − Adc
2.5 − MHz
15 120
10 − kHz
*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
20
50 ms
10 dc 1 ms
6
4
500 ms
2 250 ms
1
0.6 BONDING WIRE LIMIT
0.4 THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.2
6 10
20
40 60
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25°C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
http://onsemi.com
2



Part Number 2N3055
Description Complementary Silicon Power Transistors
Maker ON Semiconductor - ON Semiconductor
Total Page 4 Pages
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