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2N2907A

Small Signal Switching Transistor



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2N2907A pdf
2N2907A
Small Signal Switching
Transistor
PNP Silicon
Features
MIL−PRF−19500/291 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
Symbol Value
VCEO
−60
VCBO
−60
VEBO
−5.0
IC −600
PT 500
PT 1.0
TJ, Tstg −65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
325 °C/W
Thermal Resistance, Junction−to−Case
RqJC
150 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−18
CASE 206AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N2907A
JANTX2N2907A TO−18
Bulk
JANTXV2N2907A
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 3
1
Publication Order Number:
2N2907A/D



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2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc)
V(BR)CEO
−60
Vdc
Collector −Emitter Cutoff Current
(VCE = −50 Vdc)
ICES
nAdc
− −50
Collector−Base Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −60 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = −4.0 Vdc)
(VEB = −5.0 Vdc)
ON CHARACTERISTICS (Note 1)
ICBO
IEBO
− −10 nAdc
− −10 mAdc
− −50 nAdc
− −10 mAdc
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
hFE
75 −
100 450
100 −
100 300
50 −
Collector −Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
Base −Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
−0.6
Vdc
−0.4
−1.6
Vdc
−1.3
−2.6
Magnitude of Small−Signal Current Gain
(IC = −20 mAdc, VCE = −20 Vdc, f = 100 MHz)
Small−Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1 kHz)
Output Capacitance
(VCB = −10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
|hfe|
hfe
Cobo
2.0 −
100 −
pF
− 8.0
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz)
Cibo
pF
− 30
SWITCHING CHARACTERISTICS
Turn−On Time
(Reference Figure in MIL−PRF−19500/291)
ton ns
− 45
Turn−Off Time
(Reference Figure in MIL−PRF−19500/291)
toff ns
− 300
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2



Part Number 2N2907A
Description Small Signal Switching Transistor
Maker ON Semiconductor - ON Semiconductor
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