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  Microsemi Electronic Components Datasheet  


2N2880

5 Amp/ 80V/ Planar/ NPN Power Transistors JAN/JTX/JANTXV/JANS



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2N2880 pdf
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
Fast Switching
High Frequency Switching and Amplifying
FEATURES:
High Reliability
Greater Gain Stability
2N2880
5 Amp, 80V,
Planar, NPN
Power Transistors
JAN,JTX,JANTXV,JANS
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
CHARACTERISTIC
VCBO*
VCEO*
VEBO*
IC*
IB*
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
TSTG*
TJ*
*
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
PT* TA = 25°C
TC = 100°C
θ JC
Thermal Resistance
Junction to Case
* Indicates MIL-S-19500/315
MSC0950A.DOC 11-09-98
TO-59
VALUE
110
80
8
5
0.5
-65 to 200
-65 to 200
230
2
30
3.33
UNITS
V
V
V
A
A
°C
°C
°C
W
W
°C/W



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2N2880 pdf
2N2880
ELECTRICAL CHARACTERISTICS
(25°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
BVCBO*
BVCEO*
Collector-Base Voltage
Collector-Emitter Voltage
(Note 1)
IC = 10 µAdc, Cond. D
IC = 0.1 Adc, Cond. D
BVEBO*
ICEO*
ICEX*
ICBO*
IEBO*
hFE*
Emitter-Base Voltage
Collector-Emitter
Cutoff Current
Collector-Emitter
Cutoff Current
Collector-Base
Cutoff Current
Emitter-Base
Cutoff Current
DC Current Gain
(Note 1)
IE = 10 µAdc, Cond. D
VCE = 60 Vdc, Cond. D
VCE = 110 Vdc, VEB = 0.5 Vdc, Cond. A
VCE = 80 Vdc, VEB = 0.5 Vdc, Cond. A, TA = 150°C
VCB = 80 Vdc, Cond. D
VCB = 60 Vdc, Cond. D, TA = - 150°C
VEB = 6 Vdc, Cond. D
IC = 50 mAdc, VCE = 5 Vdc
IC = 1 Adc, VCE = 5 Vdc
IC = 5 Adc, VCE = 5 Vdc
IC = 1 Adc, VCE = 5 Vdc, TA = - 55°C
hFE*
VCE(sat)*
VBE(sat)*
VBE(on)*
fT*
AC Current Gain
Collector Saturation
Voltage (Note 1)
Base Saturation
Voltage (Note 1)
Base On-Voltage
(Note 1)
Gain-Bandwidth Product
IC = 50 mAdc, VCE = 5 Vdc, f = è KHz
IC = 1 Adc, IB = 0.1 Adc
IC = 5 Adc, IB = 0.5 Adc
IC = 1 Adc, IB = 0.1 Adc
IC = 1 Adc, VCE = 2 Vdc
IC = 1 Adc, VCE = 10 Vdc, f = 10 MHz
Cob*
Output Capacitance
VCB = 10 Vdc, 1E = 0, f = 1 MHz
td* Delay Time
IC = 1 A, IB1 = IB2 = 100 ma
tr* Rise Time
IC = 1 A, IB1 = IB2 = 100 ma
ts* Storage Time
IC = 1 A, IB1, = IB2 = 100 ma
tf*
IS/B*
ES/B*
ES/B*
Fall Time
Forward-Biased
Second Breakdown
Clamped Reverse-
Biased Second
Breakdown
Unclamped Reverse-
Biased Second
Breakdown
IC = 1 A, IB1 = IB2 = 100 ma
VCE = 20 Vdc, t = 10 Sec, TC = 100°C
VCE = 80 Vdc, t = 10 Sec, TC = 100°C
IC = 5 A, L = 1 mH, VClamp = 110 V, TC = 100°C
IB = 0.5 A, RBB2 = 20, VBB2 = -3.0V
IC = 5 A, L = 1 mH, Base Open
IC = 1.6 A, L = 10 mH, Base Open
Note 1: Pulse Test: PW = 300µs, Duty Cycle 2%.
* Indicates MIL-S-19500/315
MSC0950A.DOC 11-09-98
VALUE
Min. Max.
110 ----
80 ----
Units
Vdc
Vdc
8 ---- Vdc
---- 20 µAdc
---- 1.0 µAdc
---- 50 µA
---- 0.2 µAdc
---- 10 ----
---- 0.2 µAdc
40 120 ----
40 120 ----
15 ---- ----
15 ---- ----
40 120 ----
---- 0.25 Vdc
---- 1.5 Vdc
---- 1.2 Vdc
---- 1.2 Vdc
30 120 MHz
---- 150
pf
---- 60 ns
---- 300 ns
---- 1.7 µs
---- 300 ns
1.5 ---- Adc
80 ---- mAdc
12.5 ----
mj
12.5 ----
12.8 ----
mj
mj



Part Number 2N2880
Description 5 Amp/ 80V/ Planar/ NPN Power Transistors JAN/JTX/JANTXV/JANS
Maker Microsemi Corporation - Microsemi Corporation
Total Page 3 Pages
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