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2N2857

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS


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2N2857 pdf
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Silicon NPN, To-72 packaged UHF Transistor
1.6 GHz Current-Gain Bandwidth Product @ 5mA IC
Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz
2N2857
2
13
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer
applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Value
15
30
2.5
40
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
MSC1066.PDF 3-10-99



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2N2857 pdf
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCBO
BVEBO
ICBO
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC=1.0 µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, IE = 0 Vdc)
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
DYNAMIC
Symbol
Test Conditions
fT Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
NF Noise Figure (50 Ohms)
(IC = 1.5 mAdc, VCE = 6 Vdc, f = 500 MHz)
2N2857
Min.
15
30
2.5
-
Value
Typ.
-
-
-
-
Max.
-
-
-
.01
Unit
Vdc
Vdc
Vdc
µA
30 - 150
Min.
Value
Typ.
1.6
5.5
Max.
-
Unit
GHz
dB
MSC1066.PDF 3-10-99



Part Number 2N2857
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Maker Microsemi - Microsemi
Total Page 4 Pages
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