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  Microsemi Electronic Components Datasheet  


2N2609

P-CHANNEL J-FET



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2N2609 pdf
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/296
Devices
2N2609
TECHNICAL DATA
Qualified Level
JAN
ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Gate-Source Voltage
Power Dissipation (1)
TA = +250C
VGSS
PD
30
300
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.71 mW/0C for TA > +250C.
Top, Tstg
-65 to +200
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
Symbol
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 µAdc
V(BR)GSS
Gate Reverse Current
VDS = 0, VGS = 30 Vdc
VDS = 0, VGS = 15 Vdc
Drain Current
IGSS
VGS = 0, VDS = 5.0 Vdc
IDDSS
Gate-Source Cutoff Voltage
VDS = 5.0 V, ID = 1.0 µAdc
VGS(off)
Magnitude of Small-Signal, Common-Source Short-Circuit Forward
Transfer Admittance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
Yfs2
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz
Ciss
Common-Source Spot Noise Figure
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc, RL = 220
NF
Units
V
mW
0C
TO-18
(TO-206AA)
*See appendix A for
package outline
Min.
30
-2.0
0.75
Max.
30
22.5
-10.0
6.0
Units
Vdc
ηAdc
mAdc
Vdc
2,000
6,250
10
µmho
pF
3.0 dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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Part Number 2N2609
Description P-CHANNEL J-FET
Maker Microsemi Corporation - Microsemi Corporation
Total Page 1 Pages
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