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  Microsemi Electronic Components Datasheet  


2N2608

P-CHANNEL J-FET



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2N2608 pdf
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/295
DEVICES
2N2608
LEVELS
MQ = JAN Equivalent
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Gate-Source Voltage
Power Dissipation(1)
VGSS
30
TA = +25°C
PD 300
Operating Junction & Storage Temperature Range
Top, Tstg -65 to + 200
(1) Derate linearly 1.71 mW/°C for TA > +25°C.
Unit
V
mW
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0μA dc
Symbol
V(BR)GSS
Min.
30
Max.
Gate Reverse Current
VDS = 0, VGS = 30V dc
VDS = 0, VGS = 15V dc
IGSS
10
7.5
Drain Current
VGS = 0V dc, VDS = 5.0V dc
IDSS -1.0
-5.0
Gate-Source Cutoff Voltage
VDS = 5.0V, ID = 1.0μA dc
VGS(off)
0.75
6.0
Magnitude of Small-Signal, Common-Source
Short-Circuit Forward Transfer Admittance
VGS = 0, VDS = 5.0V dc, f = 1.0kHz
|Yfs2|
1,000
4,500
Small-Signal, Common-Source Short-Circuit
Input Capacitance
VGS = 0, VDS = 5.0V dc, f = 1.0MHz
Common-Source Spot Noise Figure
VGS = 0, VDS = 5.0V dc, f = 1.0kHz
BW = 16%, RG = 1.0 megohms
egen = 1.82mV dc, RL = 470Ω
Ciss
NF
10
3.0
Unit
Vdc
ηA
mA
Vdc
μmho
pF
dB
TO-18
(TO-206AA)
T4-LDS-0004 Rev. 1 (063375)
Page 1 of 1



Part Number 2N2608
Description P-CHANNEL J-FET
Maker Microsemi - Microsemi
Total Page 1 Pages
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