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2N2605

(2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR



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2N2605 pdf
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TECHNICAL DATA
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
Devices
2N2604
2N2605
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.28 mW/0C above TA = +250C
Symbol
VCBO
VCEO
VEBO
IC
PT
TJ, Tstg
2N2604 2N2605
80 70
60
6.0
30
400
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
mW/0C
0C
Symbol
RθJC
Max.
0.437
Unit
0C/mW
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 µAdc
2N2604
2N2605
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Emitter-Base Breakdown Current
IE = 10 µAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
Min.
80
70
60
6.0
TO-46*
(TO-206AB)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
10 ηAdc
2.0 ηAdc
10 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



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2N2604, 2N2605 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
2N2604
2N2605
IC = 500 µAdc, VCE = 5.0 Vdc
2N2604
2N2605
IC = 10 mAdc, VCE = 5.0 Vdc
2N2604
2N2605
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 500 µAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 500 µAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz
2N2604
2N2605
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
2N2604
2N2605
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f= 1.0 kHz
2N2604
2N2605
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 0.5 mAdc, VCE = 5.0 Vdc, f = 30 MHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz
Noise Figure
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 k, f = 100 Hz
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 k, f = 1.0 kHz
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 k, f = 10 kHz
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hie
hoe
hfe
hfe
Cobo
F1
F2
F3
Min. Max. Unit
40 120
100 300
60 180
150 450
40 160
100 400
0.3
0.7 0.9
Vdc
Vdc
1.0 10
2.0 20
k
40 µmhos
60
60 180
150 450
1.0 8.0
6.0 pF
5.0 dB
3.0
3.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N2605
Description (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR
Maker Microsemi Corporation - Microsemi Corporation
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