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2N2369AUBC

NPN SILICON TRANSISTOR



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2N2369AUBC pdf
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N4449
2N2369AUBC *
* Available to JANS quality level only.
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
2N2369A / U / UA
2N4449 / UB / UBC
2N2369A / U / UA
2N4449 / UB / UBC
Collector-Emitter Voltage
Total Power Dissipation @
TA = +25°C
2N2369A; 2N4449
UA, UB, UBC
U
Symbol
VCEO
VEBO
VCBO
ICES
PT
Value
15
20
4.5
6.0
40
40
0.36 (1)
0.36 (1, 5)
0.50 (4)
Unit
Vdc
Vdc
Vdc
Vdc
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Value Unit
Thermal Resistance, Ambient-to-Case
Note:
1.
2.
3.
4.
5.
2N2369A; 2N4449
UA, UB, UBC
RθJA
400
400 (5)
°C/W
U 350
Derate linearly 2.06 mW°/C above TA = +25°C.
Derate linearly 4.76 mW°/C above TC = +95°C.
Derate linearly 3.08 mW°/C above TC = +70°C.
Derate linearly 3.44 mW°/C above TA = +54.5°C.
Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Base Cutoff Current
VCE = 20Vdc
Symbol
Min. Max. Unit
V(BR)CEO
15
Vdc
ICES 0.4 μAdc
T4-LDS-0057 Rev. 2 (081394)
TO-18 (TO-206AA)
2N2369A
TO-46 (TO-206AB)
2N4449
SURFACE MOUNT
UA
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
SURFACE MOUNT
U (Dual Transistor)
Page 1 of 2



No Preview Available !

2N2369AUBC pdf
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
VEB = 4.5Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
Collector- Base Breakdown Voltage
VCB = 40Vdc
Collector-Base Cutoff Current
VCB = 32Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10mAdc, VCE = 0.35Vdc
IC = 30mAdc, VCE = 0.4Vdc
IC = 10mAdc, VCE = 1.0Vdc
IC = 100mAdc, VCE = 1.0Vdc
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 30mAdc, IB = 3.0mAdc
IC = 100mAdc, IB = 10mAdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 30mAdc, IB = 3.0mAdc
IC = 100mAdc, IB = 10mAdc
DYNAMIC CHARACTERISTICS
Symbol
IEBO
ICBO
hFE
VCE(sat)
VBE(sat)
Parameters / Test Conditions
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 100MHz
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz f 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc
Turn-Off Time
IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc
Charge Storage Time
IC = 10mAdc; IB1 = 10mAdc, IB2 = 10mAdc
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%.
Symbol
|hfe|
Cobo
Cibo
Symbol
ton
toff
tS
Min.
40
30
40
20
0.70
0.80
Min.
5.0
Min.
Max.
10
0.25
10
0.2
120
120
120
120
0.20
0.25
0.45
0.85
0.90
1.20
Max.
10
4.0
5.0
Unit
μAdc
μAdc
Vdc
Vdc
Unit
pF
pF
Max.
12
18
13
Unit
ηs
ηs
ηs
T4-LDS-0057 Rev. 2 (081394)
Page 2 of 2



Part Number 2N2369AUBC
Description NPN SILICON TRANSISTOR
Maker Microsemi - Microsemi
Total Page 2 Pages
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