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2N2369AUB

NPN SILICON SWITCHING TRANSISTOR



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2N2369AUB pdf
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/317
Devices
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N4449
2N4449U
2N4449UA
2N4449UB
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Total Power Dissipation
2N2369A; 2N4449
All UA
All UB
All U
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
2N2369A; 2N4449
All UA
All UB
All U
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
All UA
All UB
All U
1) Derate linearly 3.08 mW/0C above TA = +37.50C
2) Derate linearly 6.85 mW/0C above TC = +250C
3) Derate linearly 3.44 mW/0C above TA = +63.50C
4) Derate linearly 8.55 mW/0C above TC = +63.50C
Symbol All UB
All others
VCEO
20
15
VEBO
6.0
4.5
VCBO
40
VCES
PT
40
@ TA = +250C @ TC = +250C
0.50(1)
1.2(2)
0.50(5)
1.2(2)
0.40(6)
1.4(7)
0.60(3)
1.5(4)
Top, Tstg
-65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
W
W
0C
Symbol
Max.
Unit
RθJC
146
125 0C/mW
135
117
RθJA
325
350 0C/mW
437
291
5) Derate linearly 2.86 mW/0C above TC = +63.50C
6) Derate linearly 2.29 mW/0C above TC = +63.50C
7) Derate linearly 8.00 mW/0C above TC = +63.50C
TO-18* (TO-206AA)
2N2369A
TO-46 (TO-206AB)
2N4449
SURFACE MOUNT
UA*
SURFACE MOUNT
UB*
SURFACE MOUNT
U*
*See appendix A for
package outline
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



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2N2369AUB pdf
2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Emitter Cutoff Current
VCE = 20 Vdc
Emitter-Base Breakdown Voltage
V(BR)CEO
ICES
VEB = 4.5 Vdc
Emitter-Base Cutoff Current
IEBO
VEB = 4.0 Vdc
Collector-Base Breakdown Voltage
VCB = 40 Vdc
Collector-Base Cutoff Current
ICBO
VCB = 32 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 0.35 Vdc
IC = 30 mAdc, VCE = 0.4 Vdc
IC = 10 mAdc, VCE = 1.0 Vdc
hFE
IC = 100 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
Base-Emitter Saturation Voltage
VCE(sat)
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
VBE(sat)
IC = 100 mAdc, IB = 10 mAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
(1)Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
hfe
Cobo
Cibo
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc
Turn-Off Time
IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc
Charge Storage Time
IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc
ton
toff
ts
Min.
15
40
30
40
20
0.70
0.80
5.0
Max.
0.4
10
0.25
10
0.2
120
120
120
120
0.20
0.25
0.45
0.85
0.90
1.20
10
4.0
5.0
12
18
13
Unit
Vdc
µAdc
µAdc
µAdc
Vdc
Vdc
pF
pF
ηs
ηs
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N2369AUB
Description NPN SILICON SWITCHING TRANSISTOR
Maker Microsemi - Microsemi
Total Page 2 Pages
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