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2N2222A

NPN SILICON SWITCHING TRANSISTOR



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2N2222A pdf
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
Devices
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
JANS
JANHC
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C
2N2221A, L; 2N2222A, L (1)
2N2221AUA; 2N2222AUA (2)
2N2221AUB; 2N2222AUB (1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
2N2221A, L; 2N2222A, L
2N2221AUA; 2N2222AUA
2N2221AUB; 2N2222AUB
1) Derate linearly 3.08 mW/0C above TA > +37.50C
2) Derate linearly 4.76 mW/0C above TA > +63.50C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
Symbol
RθJA
All Types
50
75
6.0
800
0.5
0.65
0.50
-65 to +200
Max.
325
210
325
Unit
Vdc
Vdc
Vdc
mAdc
W
0C
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
VCB= 75 Vdc
V(BR)CEO
ICBO
VCB= 60 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
VEB = 4.0 Vdc
Collector-Base Cutoff Current
VCE = 50 Vdc
IEBO
ICES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
TO-18* (TO-206AA)
2N2221A, 2N2222A
4 PIN*
2N2221AUA, 2N2222AUA
3 PIN*
2N2221AUB, 2N2222AUB
*See appendix A for package
outline
Min. Max.
Unit
50 Vdc
10 µAdc
10 ηAdc
10 µAdc
10 ηAdc
50 ηAdc
120101
Page 1 of 2



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2N2222A pdf
2N2221A, 2N2221AUA, 2N2221AUB, 2N2222A, 2N2222AUA, 2N2222AUB JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
2N2221A, L, UA, UB
2N2222A, L, UA, UB
IC = 1.0 mAdc, VCE = 10 Vdc
2N2221A, L, UA, UB
2N2222A, L, UA, UB
IC = 10 mAdc, VCE = 10 Vdc
2N2221A, L, UA, UB
2N2222A, L, UA, UB
IC = 150 mAdc, VCE = 10 Vdc
2N2221A, L, UA, UB
2N2222A, L, UA, UB
IC = 500 mAdc, VCE = 10 Vdc
2N2221A, L, UA, UB
2N2222A, L, UA, UB
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2N2221A, L, UA, UB
2N2222A, L, UA, UB
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
See Figure 8 of MIL-PRF-19500/255
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
ton
toff
Min. Max.
30
50
35 150
75 325
40
100
40 120
100 300
20
30
0.3
1.0
0.6 1.2
2.0
30
50
2.5
8.0
25
35
300
Unit
Vdc
Vdc
pF
pF
ηs
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N2222A
Description NPN SILICON SWITCHING TRANSISTOR
Maker Microsemi - Microsemi
Total Page 2 Pages
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