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2N2222A

Small Signal Switching Transistor



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2N2222A pdf
2N2222A
Small Signal Switching
Transistor
NPN Silicon
Features
MIL−PRF−19500/255 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PT
PT
TJ, Tstg
50
75
6.0
800
500
1.0
−65 to
+200
Vdc
Vdc
Vdc
mAdc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
RqJA
325 °C/W
Thermal Resistance, Junction to Case
RqJC
150 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−18
CASE 206AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N2222A
JANTX2N2222A TO−18
Bulk
JANTXV2N2222A
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 2
1
Publication Order Number:
2N2222A/D



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2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
50
Vdc
Collector−Base Cutoff Current
(VCB = 75 Vdc)
(VCB = 60 Vdc)
Emitter−Base Cutoff Current
(VEB = 6.0 Vdc)
(VEB = 4.0 Vdc)
Collector−Emitter Cutoff Current
(VCE = 50 Vdc)
ICBO
IEBO
ICES
− 10 mAdc
− 10 nAdc
− 10 mAdc
− 10 nAdc
− 50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0,100 kHz f 1.0 MHz )
SWITCHING (SATURATED) CHARACTERISTICS
Turn−On Time
(Reference Figure in MIL−PRF−19500/255)
hFE
VCE(sat)
VBE(sat)
|hfe|
hfe
Cibo
Cobo
ton
50 −
75 325
100 −
100 300
30 −
− 0.3
− 1.0
0.6 1.2
− 2.0
2.5 −
50 −
− 25
− 8.0
− 35
Vdc
Vdc
pF
pF
ns
Turn−Off Time
(Reference Figure in MIL−PRF−19500/255)
toff − 300 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2



Part Number 2N2222A
Description Small Signal Switching Transistor
Maker ON Semiconductor - ON Semiconductor
Total Page 5 Pages
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