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2N2150

NPN POWER SILICON TRANSISTOR



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2N2150 pdf
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277
Devices
2N2150
2N2151
TECHNICAL DATA
Qualified Level
JANTX
MAXIMUM RATINGS (TC = 250C unless otherwise noted)
Ratings
Symbol Value
Collector-Emitter Voltage
VCEO
100
Collector-Base Voltage
VCBO
150
Emitter-Base Voltage
VEBO
8.0
Base Current
IB 2.0
Collector Current
Total Power Dissipation
@ Tc = +1000C(1)
IC
PT
2.0
30
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.3 W/0C for TC > +1000C
RθJC
3.3
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TC = +250C)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
Collector-Emitter Breakdown Voltage
IC = 100 µAdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
Collector-Base Cutoff Current
VCB = 120 Vdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = -1.0 Vdc
Emitter-Base Cutoff Current
VEB = 8.0 Vdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = 0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
V(BR)CEO
VCBO
ICEO
ICBO
ICEX
IEBO
ICES
TO-111*
*See Appendix A for
Package Outline
Min. Max.
Unit
100 Vdc
150 Vdc
10 µAdc
5.0 µAdc
5.0 µAdc
2.0 µAdc
5.0 µAdc
120101
Page 1 of 2



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2N2150, 2N2151 JANTX SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc
IC = 0.5 Adc, VCE = 5.0 Vdc
IC = 0.1 Adc, VCE = 5.0 Vdc
2N2150
IC = 1.0 Adc, VCE = 5.0 Vdc
IC = 0.5 Adc, VCE = 5.0 Vdc
IC = 0.1 Adc, VCE = 5.0 Vdc
2N2151
Base-Emitter Voltage Non -Saturated
VCE = 5.0 Vdc, IC =1.0 Adc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.1 mAdc, VCE = 30 Vdc, f = 10 MHz
Output Capacitance
VCB = 20 Vdc, IE = 0, 100 kHz f 1.0 MHz
SAFE OPERATING AREA
Test 1
VCE = 15 Vdc, IC = 2.0 Adc
Test 2
VCE = 57 Vdc, IC = 200 mAdc
Test 3
VCE = 100 Vdc, IC = 25 mAdc
Symbol
hFE
VBE
VCE(sat)
VBE(sat)
hfe
Cobo
Min. Max. Unit
20 60
20 60
20
40 120
40 120
40
1.2 Vdc
1.0 Vdc
1.2 Vdc
1.0 7.0
160
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N2150
Description NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation - Microsemi Corporation
Total Page 2 Pages
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