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2N2060

UNITIZED DUAL NPN SILICON TRANSISTOR



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2N2060 pdf
TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
2N2060
2N2060L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N2060
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
VCEO
VCBO
VEBO
IC
60
100
7.0
500
One Both
Vdc
Vdc
Vdc
mAdc
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Section Sections
PT
540 600
1.5 2.12
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
mW
W
0C
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3)
RBE 10 , IC = 10 mAdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Base Cutoff Current
V(BR)CER
V(BR)CEO
VCB = 100 Vdc
ICBO
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
IEBO
Min.
80
60
TO-78*
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
10 µAdc
2.0 ηAdc
10 µAdc
2.0 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



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2N2060, 2N2060L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 100 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Input Capacitance
VEB = 0.5 Vdc, IE = 0, 100 kHz f 1.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
(3)Pulse Test: Pulse Width 250 to 350µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hib
hfe
hie
hoe
Cibo
Cobo
Min. Max. Unit
25 75
30 90
40 120
50 150
0.3 Vdc
0.9 Vdc
3 25
20
50
1,000
0
30
150
4,000
16
85
15
µmhos
pF
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N2060
Description UNITIZED DUAL NPN SILICON TRANSISTOR
Maker Microsemi - Microsemi
Total Page 2 Pages
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