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2N1893S

NPN LOW POWER SILICON TRANSISTOR



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2N1893S pdf
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
2N1893
2N1893S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol All Devices
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (RBE = 10 )
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
VCEO
VCBO
VEBO
VCER
IC
PT
80
120
7.0
100
500
2N720A 2N1893, S
0.5 0.8
1.8 3.0
Operating & Storage Junction Temperature Range
TJ, Tsrg
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol 2N720A 2N1893, S
Thermal Resistance, Junction-to-Case
RθJC
97
58
1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE = 10
V(BR)CER
Collector-Base Cutoff Current
VCB = 120 Vdc
ICBO
VCB = 90 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
VEB = 5.0 Vdc
Units
Vdc
Vdc
Vdc
Vdc
mAdc
TO-18 (TO-206AA)*
2N720A
W
0C
Unit
0C/W
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
Min. Max.
Unit
80 Vdc
Vdc
100
µAdc
10 ηAdc
10
µAdc
10
10
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



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2N1893S pdf
2N720A; 2N1893; 2N1893S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Voltage
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
VCE =5.0 Vdc, IC = 1.0 mAdc
VCE =10 Vdc, IC = 5.0 mAdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
VCB = 10 Vdc, IC = 5.0 mAdc
Small-Signal Short-Circuit Output Admittance
VCB = 10 Vdc, IC = 5.0 mAdc
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 3 of MIL-PRF-19500/182)
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
hib
hob
Cobo
ton + toff
Min. Max. Unit
20
35
40 120
5.0 Vdc
1.3 Vdc
3.0 10
35
45 100
4.0 8.0
0.5
2 15
µΩ
PF
30 ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N1893S
Description NPN LOW POWER SILICON TRANSISTOR
Maker Microsemi - Microsemi
Total Page 2 Pages
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