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  Microsemi Electronic Components Datasheet  


2N1893

NPN BIPOLAR TRANSISTOR



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2N1893 pdf
Features
Meets MIL-S-19500/182
Collector-Base Voltage 120
Collector Current: 0.5 mA
Fast Switching 30 nS
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
Maximum Ratings
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ T A = 25oC
Derate above 25oC
Total Device Dissipation @ T C = 25oC
Derate above 25oC
Operating Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Mechanical Outline
2N1893
120 Volts
0.5 Amps
NPN
BIPOLAR
TRANSISTOR
SYMBOL
VCEO
VCER
VCBO
VEBO
IC
PD
PD
TJ
TS
RθJA
RθJA
MAX.
80
100
120
7.0
0.5
0.8
4.57
3.0
17.2
-55 to
+200
-55 to
+200
219
58
UNIT
Vdc
Vdc
Vdc
Vdc
Adc
Watt
mW/oC
Watts
mW/oC
oC
oC
oC/W
oC/W
Datasheet# MSC0271A 5/19/97



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2N1893 pdf
2N1893
Electrical Parameters (TA @ 25°C unless otherwise specified)
CHARACTERISTICS
Off Characteristics
Collector-Emitter Breakdown Voltage (I C = 100 mAdc, RBE = 10 ohms)(1)
Collector-Emitter Sustaining Voltage(1) (I C = 30 mAdc, IB = 0)(1)
Collector-Base Breakdown Voltage (I C = 100 µAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0)
Collector Cutoff Current (V CB = 90 Vdc, IE = 0)
(V CB = 90 Vdc, IE = 0, TA = 150oC)
Emitter Cutoff Current (V EB = 5.0 Vdc, IC = 0)
On Characteristics
D.C. Current Gain (I C = 0.1 mAdc, VCE = 10 Vdc)
(I C = 10mAdc, VCE = 10 Vdc)(1)
(I C = 10mAdc, VCE = 10 Vdc, TA = -55oC)(1)
(I C = 150mAdc, VCE = 10 Vdc)(1)
Collector-Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
Base-Emitter Saturation Voltage(1) ( Ic = 150 mAdc, IB = 15 mAdc)
SYMBOL
BVCER
BVCEO
BV(BR)CBO
BV(BR)EBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
MIN.
100
80
120
7.0
--
--
--
20
35
20
40
--
--
Magnitude of small signal short-circuit forward current ratio (I C = 50 mAdc,
VCE = 10 Vdc, f = 20 MHz)
Output Capacitance (V CB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Impedance =
(I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0kHz)
Voltage Feedback Ratio
(I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)
Small-Signal Current Gain (I c = 1.0 mAdc, VcB = 5.0Vdc, f = 1.0 kHz)
Output Admittance
(I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)
(I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)
Pulse response (Vcc = 20Vdc, Ic = 500mAdc)
/hfe/
COBO
hib
hrb
hfe
hob
ton + toff
3
5
4.0
--
35
45
--
--
--
TYP. MAX. UNIT
-- Vdc
-- Vdc
-- Vdc
-- Vdc
0.01 µAdc
15
0.01 µAdc
-- --
--
--
120
0.5 Vdc
1.3 Vdc
10
15 pF
8.0 Ohms
1.5 X 10-4
100 --
--
0.5 µmho
30 ns
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Datasheet# MSC0271A 5/19/97



Part Number 2N1893
Description NPN BIPOLAR TRANSISTOR
Maker Microsemi - Microsemi
Total Page 2 Pages
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