http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



  Microsemi Electronic Components Datasheet  


2N1722

(2N1722 / 2N1724) NPN SILICON HIGH POWER TRANSISTOR



No Preview Available !

2N1722 pdf
TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/262
Devices
2N1722
2N1724
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +1000C (2)
VCEO
VCBO
VEBO
IC
PT
Temperature Range:
Operating
TOP,
Storage Junction
Tstg
1) Derate linearly 20 mW/0C for TA between +250C and +1750C
2) Derate linearly 666 mW/0C for TC between +1000C and +1750C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Emitter-Base Breakdown Voltage
IE = 10 mAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
Collector-Base Cutoff Current
VCB = 175 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
Value
80
175
10
5.0
3.0
50
175
-65 to +200
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
IEBO
Units
Vdc
Vdc
Vdc
Adc
W
W
0C
TO-61*
2N1724
TO-53*
2N1722
*See Appendix A for
Package Outline
Min. Max.
Unit
80 Vdc
10 Vdc
300 µAdc
5.0 mAdc
400 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

2N1722 pdf
2N1722, 2N1724 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 2.0 Adc, VCE = 15 Vdc
IC = 5.0 Adc, VCE = 15 Vdc
IC = 100 mAdc, VCE = 15 Vdc
Collector-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 200 mAdc
Base-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 200 mVdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 15 Vdc; f = 10 MHz
Output Capacitance
VCB = 15 Vdc, IE = 0, 100 kHz f 1.0 MHz
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
Min. Max. Unit
30 120
15
30
0.6 Vdc
1.2 Vdc
1.0 5.0
550
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N1722
Description (2N1722 / 2N1724) NPN SILICON HIGH POWER TRANSISTOR
Maker Microsemi - Microsemi
Total Page 2 Pages
PDF Download
2N1722 pdf
Download PDF File
2N1722 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
2N170 Alloy Junction Germanium Transistors 2N170
Semitronics
PDF
2N1700 Small Signal Transistors 2N1700
ETC
PDF
2N1700 Trans GP BJT NPN 40V 1A 3-Pin TO-5 2N1700
New Jersey Semiconductor
PDF
2N1711 NPN medium power transistor 2N1711
Philips
PDF
2N1711 GENERAL PURPOSE TRANSISTOR NPN SILICON 2N1711
Boca
PDF
2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS 2N1711
STMicroelectronics
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components