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2N1488

NPN SILICON HIGH POWER TRANSISTOR



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2N1488 pdf
TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices
Qualified Level
2N1487
2N1488
2N1489
2N1490
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = 250C (1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.429 W/0C for TC > 250C
Symbol
VCEO
VCBO
VCEX
VEBO
IB
IC
PT
TJ, Tstg
Symbol
RθJC
2N1487 2N1488
2N1498 2N1490
40 55
60 100
60 100
10
3.0
6.0
75
-65 to +200
Max.
2.33
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 200 µAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 0.5 mAdc, VEB = 1.5 Vdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CEX
Collector-Base Cutoff Current
VCB = 30 Vdc
Emitter-Base Cutoff Current
VEB = 10 Vdc
ICBO
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
0C
TO-33*
(TO-204AA)
Unit
0C/W
*See Appendix A for
Package Outline
Min. Max.
Unit
40 Vdc
55
60 Vdc
100
60 Vdc
100
25 µAdc
25 µAdc
120101
Page 1 of 2



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2N1488 pdf
2N1487, 2N1488, 2N1489, 2N1490 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 1.5 Adc, VCE = 4.0 Vdc
2N1487, 2N1488
2N1489, 2N1490
Collector-Emitter Saturation Voltage
IC = 1.5 Adc, IB = 300 mAdc
2N1487, 2N1488
IC = 1.5 Adc, IB = 100 mAdc
Base-Emitter Voltage
2N1489, 2N1490
IC = 1.5 Adc, VCE = 4.0 Vdc
2N1487, 2N1488
2N1489, 2N1490
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current
Transfer Ratio Cutoff Frequency
IC = 100 mAdc, VCB = 12 Vdc
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On / Turn-Off Time
VCC = 12 Vdc; IB0 = IB2 = 150 mAdc; IB1 = 300 mAdc; RC = 7.8
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(on)
fhfb
Cobo
ton + toff
Min.
15
25
500
Max.
45
75
3.0
1.0
3.0
2.0
700
25
Unit
Vdc
Vdc
kc
pF
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N1488
Description NPN SILICON HIGH POWER TRANSISTOR
Maker Microsemi - Microsemi
Total Page 2 Pages
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