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2N1486

NPN SILICON MEDIUM POWER TRANSISTOR


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2N1486 pdf
TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices
2N1483
2N1484
2N1485
2N1486
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ TA = 250C (1)
@ TC = 250C (2)
Operating & Storage Junction Temperature Range
1) Derate linearly 0.010 W/0C for TA > 250C
2) Derate linearly 0.143 W/0C for TC > 250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
2N1483 2N1484
2N1485 2N1486
40 55
60 100
12
3.0
1.75
25
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
W
0C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Collector-Base Breakdown Voltage
IC = 100 µAdc
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc
Collector-Base Cutoff Current
VCB = 30 Vdc
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 12 Vdc
2N1483, 2N1485
2N1484, 2N1486
2N1483, 2N1485
2N1484, 2N1486
2N1483, 2N1485
2N1484, 2N1486
2N1483, 2N1485
2N1484, 2N1486
Symbol
V(BR)CEO
V(BR)CBO
V(BR)CEX
ICBO
IEBO
Min.
40
55
60
100
60
100
TO-8*
*See Appendix A for
Package Outline
Max.
Unit
Vdc
Vdc
Vdc
15 µAdc
15
15 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



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2N1486 pdf
2N1483, 2N1484, 2N1485, 2N1486 JAN SERIES
ELECTRICAL CHARACTERISTICS (con”t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 750 mAdc, VCE = 4.0 Vdc
2N1483, 2N1484
2N1485, 2N1486
Collector-Emitter Saturation Voltage
IC = 750 mAdc, IB = 75 mAdc
2N1483, 2N1484
IC = 750 mAdc, IB = 40 mAdc
Base-Emitter Voltage
2N1485, 2N1486
IC = 750 mAdc, VCE = 4.0 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCB = 28 Vdc
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 12 Vdc; RC = 15.9 ; IB0 = IB2 = 35 mAdc; IB1= 65 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE
f
hfb
Cobo
ton + toff
Min.
20
35
600
Max.
60
100
1.20
0.75
2.0
400
25
Unit
Vdc
Vdc
kHz
pF
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N1486
Description NPN SILICON MEDIUM POWER TRANSISTOR
Maker Microsemi - Microsemi
Total Page 4 Pages
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