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2N1131L

LOW POWER PNP SILICON TRANSISTOR



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2N1131L pdf
TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
Devices
2N1131
2N1131L
2N1132
2N1132L
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Temperature Range
1) Derate linearly 3.4 mW/0C for TA +250C
2) Derate linearly 11.4 mW/0C for TC +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tj
All Units
40
50
5.0
600
0.6
2.0
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
W
°C
TO-39*
2N1131, 2N1132
TO-5*
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 10 µAdc
V(BR)CBO
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
Collector-Emitter Cutoff Current
VCE = 50 Vdc, RBE 10 ohms
ICER
Collector-Base Cutoff Current
VCB = 50 Vdc
ICBO
VCB = 30 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
2N1311L, 2N1312L
*See appendix A for
package outline
Max.
Unit
40 Vdc
Vdc
50
100 µAdc
mAdc
10
10 µAdc
1.0
120101
Page 1 of 2



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2N1131, 2N1132 JAN, JANTX
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
2N1131, L
2N1132, L
IC = 5.0 mAdc, VCE = 10 Vdc
2N1131, L
2N1132, L
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1 kHz
2N1131, L
2N1132, L
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1 kHz
2N1131, L
2N1132, L
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
2N1131, L
2N1132, L
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-19500/177)
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hob
hib
hfe
Cobo
Cibo
ton + toff
Min.
20
30
15
25
15
30
20
30
25
2.5
3.0
Max.
45
90
1.3
1.5
50
90
1.0
5.0
35
10
20
20
45
80
50
Unit
Vdc
Vdc
µmho
pF
pF
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number 2N1131L
Description LOW POWER PNP SILICON TRANSISTOR
Maker Microsemi - Microsemi
Total Page 3 Pages
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