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Panasonic Electronic Components Datasheet


2B940A

Silicon PNP epitaxial planar type(For power amplification)



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2B940A pdf
Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264 and 2SD1264A
s Features
q High collector to emitter voltage VCEO
q Large collector power dissipation PC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB940
base voltage 2SB940A
VCBO
–200
–200
Collector to 2SB940
emitter voltage 2SB940A
VCEO
–150
–180
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–6
–3
–2
30
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SB940
voltage
2SB940A
ICBO
IEBO
VCBO
VCEO
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
VEBO
hFE1*
hFE2
VBE
VCE(sat)
fT
VCB = –200V, IE = 0
VEB = –4V, IC = 0
IC = –50µA, IE = 0
IC = –5mA, IB = 0
IE = –500µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –400mA
VCE = –10V, IC = –400mA
IC = –500mA, IB = –50mA
VCE = –10V, IC = – 0.5A, f = 10MHz
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
–50 µA
–50 µA
–200
V
–150
–180
V
–6 V
60 240
50
–1 V
–1 V
30 MHz
*hFE1 Rank classification
Rank
Q
P
hFE1 60 to 140 100 to 240
1



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2B940A pdf
Power Transistors
PC — Ta
50
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
40 (3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
30
(1)
20
10 (2)
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–600
–500
–400
–300
–200
IC — VCE
TC=25˚C
IB=–4.5mA
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–100
–1.0mA
– 0.5mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB940, 2SB940A
IC — VBE
–2.0
VCE=–10V
–1.6
–1.2
25˚C
TC=100˚C
– 0.8
– 0.4
–25˚C
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current IC (A)
–3
10000
3000
hFE — IC
VCE=–10V
1000
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
1000
fT — IC
VCE=–10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
TC=25˚C
–10
–3 ICP
IC
–1
5ms
– 0.3
– 0.1
t=0.5ms
1ms
DC
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2



Part Number 2B940A
Description Silicon PNP epitaxial planar type(For power amplification)
Maker Panasonic - Panasonic
Total Page 2 Pages
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